K4D26323QV-VC200 datasheet, PDF

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K4D26323QV-VC200: DescriptionDDR DRAM, 4MX32, 0.35ns, CMOS, PBGA144, LEAD FREE, FBGA-144; Categorystorage storage; File Size315KB，18 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4D26323QV-VC200 Overview

DDR DRAM, 4MX32, 0.35ns, CMOS, PBGA144, LEAD FREE, FBGA-144

K4D26323QV-VC200 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	LFBGA,
Contacts	144
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.35 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	S-PBGA-B144
length	12 mm
memory density	134217728 bit
Memory IC Type	DDR DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	144
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	65 °C
Minimum operating temperature
organize	4MX32
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Package shape	SQUARE
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Certification status	Not Qualified
Maximum seat height	1.4 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.1 V
Minimum supply voltage (Vsup)	1.9 V
Nominal supply voltage (Vsup)	2 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	12 mm

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K4D26323QG-GC

128M GDDR SDRAM

128Mbit GDDR SDRAM

1M x 32Bit x 4 Banks

Graphic Double Data Rate

Synchronous DRAM

with Bi-directional Data Strobe and DLL

(144-Ball FBGA)

Revision 1.0

June 2004

Samsung Electronics reserves the right to change products or specification without notice.

- 1 -

Rev 1.0(June 2004)

K4D26323QV-VC200 Related Products

	K4D26323QV-VC200	K4D26323QG-GC200	K4D26323QV-VC250	K4D26323QV-VC330	K4D26323QV-VC220	K4D26323QV-VC2A0
Description	DDR DRAM, 4MX32, 0.35ns, CMOS, PBGA144, LEAD FREE, FBGA-144	DDR DRAM, 4MX32, 0.35ns, CMOS, PBGA144, FBGA-144	DDR DRAM, 4MX32, 0.45ns, CMOS, PBGA144, LEAD FREE, FBGA-144	DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144	DDR DRAM, 4MX32, 0.45ns, CMOS, PBGA144, LEAD FREE, FBGA-144	DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	LFBGA,	LFBGA,	LFBGA,	LFBGA,	LFBGA,	LFBGA,
Contacts	144	144	144	144	144	144
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.35 ns	0.35 ns	0.45 ns	0.55 ns	0.45 ns	0.55 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144
length	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
memory density	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	144	144	144	144	144	144
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	65 °C	65 °C	65 °C	65 °C	65 °C	65 °C
organize	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
self refresh	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.1 V	1.9 V	2.1 V	2.1 V	2.1 V	2.1 V
Minimum supply voltage (Vsup)	1.9 V	1.7 V	1.9 V	1.9 V	1.9 V	1.9 V
Nominal supply voltage (Vsup)	2 V	1.8 V	2 V	2 V	2 V	2 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
Is it lead-free?	Lead free	-	Lead free	Lead free	Lead free	Lead free

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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