CTXA-4202S datasheet, PDF - EEWORLD Datasheet

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CTXA-4202S: DescriptionFast Recovery and High Power Diode; CategoryDiscrete semiconductor diode; File Size244KB，7 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/; Environmental Compliance

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CTXA-4202S Overview

Fast Recovery and High Power Diode

CTXA-4202S Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SANKEN
package instruction	R-PSFM-T3
Reach Compliance Code	unknow
ECCN code	EAR99
application	FAST RECOVERY HIGH POWER
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	100 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	100 µA
Maximum reverse recovery time	0.025 µs
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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= 200 V, I

F(AV)

= 20 A, trr = 25 ns(max.)

Fast Recovery and High Power Diode

CTXA-4202S

Features

The CTXA-4202S is a fast recovery diode which

realize a peak reverse voltage of 200 V, a typical

forward voltage drop of 0.90 V and typical trr of 18 ns

optimizing a life-time control. It has the characteristics

suit for PFC circuit of CCM.

The low thermal resistance package achieves high

performance in terms of heat dissipation.



------------------------------------------------------ 200 V



------------------------------------ 1.2 V max. (I

= 10 A)



F(AV)

------------------------------------------------------- 20 A



---------------------------------------------------- 25ns max.

= 500 mA, I

= 500 mA, 90 % of R.P.)

Package

TO-3P-3L

(4)

(1) (2) (3)

A K A

Not to scale

Applications



For PFC Circuit (CCM)



For White Goods



For Telecommunication Device, etc.

Absolute Maximum Ratings

Parameter

Peak Repetitive Reverse Voltage

Average Forward Current

Surge Forward Current

t Limiting Value

Junction Temperature

Storage Temperature



Unless otherwise specified, T

is 25 °C

Symbol

F(AV)

FSM

stg

Rating

200

100

−40 to 150

Unit

°C

10 ms

Half sinewave, one shot

1 ms

≤

≤10

Notes

Electrical Characteristics

Parameter

Forward Voltage Drop

Reverse Leakage Current

Under High Temperature

Reverse Recovery Time



Unless otherwise specified, T

is 25 °C

Symbol

H½I

Test Conditions

= 10 A

= V

, T

= 150 °C

= I

= 500 mA,

= 25 °C,

90 % recovery point

Min.

−

Typ.

0.90

−

Max.

1.2

100

Unit

µA

Thermal Resistance*

th(j-c)

−

2.5

°C/W

* R

th(j-c)

is thermal resistance between junction and case. Case temperature (T

) is measured at the under of the screw

hole of case.

CTXA-4202S-DS Rev.1.1

Mar. 18, 2014

SANKEN ELECTRIC CO.,LTD.

http://www.sanken-ele.co.jp/en/

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