V54C3128404VBS7IPC datasheet, PDF

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V54C3128404VBS7IPC: DescriptionSynchronous DRAM, 32MX4, 5.4ns, CMOS, PBGA60, MO-210, FBGA-60; Categorystorage storage; File Size726KB，56 Pages; ManufacturerProMOS Technologies Inc

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V54C3128404VBS7IPC Overview

Synchronous DRAM, 32MX4, 5.4ns, CMOS, PBGA60, MO-210, FBGA-60

V54C3128404VBS7IPC Parametric

Parameter Name	Attribute value
Maker	ProMOS Technologies Inc
Parts packaging code	BGA
package instruction	MO-210, FBGA-60
Contacts	60
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B60
length	13 mm
memory density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	60
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32MX4
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	8 mm

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V54C3128(16/80/40)4VB*I

128Mbit SDRAM, INDUSTRIAL TEMPERATURE

3.3 VOLT, TSOP II / FBGA

8M X 16, 16M X 8, 32M X 4

System Frequency (f

)

Clock Cycle Time (t

CK3

)

Clock Access Time (t

AC3

) CAS Latency = 3

Clock Access Time (t

AC2

) CAS Latency = 2

166 MHz

6 ns

5.4 ns

7PC

143 MHz

7 ns

5.4 ns

143 MHz

7 ns

5.4 ns

6 ns

Features

■

4 banks x 2Mbit x 16 organization

4 banks x 4Mbit x 8 organization

4 banks x 8Mbit x 4 organization

High speed data transfer rates up to 166 MHz

Full Synchronous Dynamic RAM, with all signals

referenced to clock rising edge

Single Pulsed RAS Interface

Data Mask for Read/Write Control

Four Banks controlled by BA0 & BA1

Programmable CAS Latency: 2, 3

Programmable Wrap Sequence: Sequential or

Interleave

Programmable Burst Length:

1, 2, 4, 8, and full page for Sequential Type

1, 2, 4, 8 for Interleave Type

Multiple Burst Read with Single Write Operation

Automatic and Controlled Precharge Command

Random Column Address every CLK (1-N Rule)

Power Down Mode

Auto Refresh and Self Refresh

Refresh Interval: 4096 cycles/64 ms

Available in 54-ball FBGA, 60-ball FBGA and

54-Pin TSOPII

LVTTL Interface

Single (+3.0 V ~3.3V)±0.3 V Power Supply

Industrial Temperature (TA): -40C to +85C

Description

The V54C3128(16/80/40)4VB*I is a four bank

Synchronous DRAM organized as 4 banks x 2Mbit

x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4.

The V54C3128(16/80/40)4VB*I achieves high

speed data transfer rates up to 166 MHz by employ-

ing a chip architecture that prefetches multiple bits

and then synchronizes the output data to a system

clock.

All of the control, address, data input and output

circuits are synchronized with the positive edge of

an externally supplied clock.

Operating the four memory banks in an inter-

leaved fashion allows random access operation to

occur at higher rate than is possible with standard

DRAMs. A sequential and gapless data rate of up to

166 MHz is possible depending on burst length,

CAS latency and speed grade of the device.

■

Device Usage Chart

Operating

Temperature

Range

-40°C to +85°C

Package Outline

C/S/T

•

Access Time (ns)

•

Power

•

7PC

•

Std.

•

Temperature

Mark

V54C3128(16/80/40)4VB*I Rev. 1.4 December 2007

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