FTE512S8N-17B datasheet, PDF - EEWORLD Datasheet

FTE512S8N-17B: Description512KX8 EEPROM 5V, 170ns, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32; Categorystorage storage; File Size461KB，7 Pages; ManufacturerForce Technologies Ltd.

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FTE512S8N-17B Overview

512KX8 EEPROM 5V, 170ns, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32

Parameter Name	Attribute value
Maker	Force Technologies Ltd.
Parts packaging code	DIP
package instruction	DIP,
Contacts	32
Reach Compliance Code	unknown
Maximum access time	170 ns
JESD-30 code	R-CDIP-T32
length	42.164 mm
memory density	4194304 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	10.16 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm
Maximum write cycle time (tWC)	10 ms

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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