MMBT3906W
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
0.087(2.20)
0.078(2.00)
40 Volts
POWER
150 mWatts
• Collector-emitter voltage V
CE
= -40V
• Collector current I
C
= -200mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.054(1.35)
0.045(1.15)
0.087(2.20)
0.070(1.80)
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Apporx. Weight: 0.00018 ounces, 0.005 grams
• Marking: S2A
0.056(1.40)
0.047(1.20)
0.004(0.10)MAX.
0.044(1.10)
0.035(0.90)
0.016(0.40)
0.008(0.20)
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-40
-40
-5.0
-200
Units
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
TOT
R
θJA
T
J
T
STG
Value
150
830
-55 to 150
-55 to 150
Units
mW
O
0.004(0.10)MIN.
• PNP epitaxial silicon, planar design
0.006(0.15)
0.002(0.05)
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
May 12.2010-REV.00
PAGE . 1
MMBT3906W
ELECTRICAL CHARACTERISTICS
P a ra m e te r
C o lle c t o r - E m i t t e r B r e a k d o wn Vo lta g e
C o lle c t o r - B a s e B re a k d o wn Vo lt a g e
E m i tt e r - B a s e B re a k d o wn Vo lt a g e
B a s e C uto ff C urr e nt
C o lle c to r C uto ff C urre nt
S ym b o l
V
(B R)
C E O
V
(B R)
C B O
V
( B R)
E B O
I
B L
I
C E X
Te s t C o nd i t i o n
IC = -1 .0 m A , IB = 0
IC = -1 0 uA , IE = 0
IE =-1 0 uA , IC =0
V C E = -3 0 V, V E B = -3 .0 V
V C E = -3 0 V, V E B = -3 .0 V
IC = -0 .1 m A , V C E = -1 .0 V
IC = -1 .0 m A , V C E = -1 .0 V
IC =-1 0 mA , V C E =-1 .0 V
IC =-5 0 mA , V C E =-1 .0 V
IC = -1 0 0 mA , V C E =- 1 .0 V
IC = -1 0 mA , IB = -1 . 0 mA
IC = -5 0 mA , IB = - 5 .0 mA
IC = -1 0 mA , IB = -1 . 0 mA
IC = -5 0 mA , IB = - 5 .0 mA
V C B = -5 V, IE = 0 , f= 1 M Hz
V E B = - 0 .5 V, IC = 0 , f= 1 M Hz
V C C = - 3 V,V B E = -- 0 .5 V,
IC = -1 0 mA , IB = -1 .0 m A
V C C = - 3 V,V B E = -0 .5 V,
IC = -1 0 mA , IB = -1 .0 m A
V C C = - 3 V, IC = -1 0 m A
IB 1 = IB 2 = - 1 .0 m A
V C C = - 3 V, IC = -1 0 m A
IB 1 = IB 2 = - 1 .0 m A
MIN.
-40
-40
- 5 .0
-
-
60
80
100
60
30
-
- 0 .6 5
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MA X .
-
-
-
-5 0
-5 0
-
-
300
-
-
-0 .2 5
-0 .4
-0 .8 5
-0 .9 5
4 .5
10
35
35
225
75
Uni t s
V
V
V
nA
nA
D C C ur re nt Ga i n ( No te 2 )
h
F E
-
C o lle c to r - E m i tte r S a tur a ti o n Vo lta g e (No te 2 )
B a s e - E mi tte r S a tura ti o n Vo lta g e ( No te 2 )
C o lle c to r - B a s e C a p a c i ta nc e
E m i tt e r - B a s e C a p a c i t a nc e
D e la y Ti me
Ri s e Ti m e
S t o ra g e Ti m e
F a ll Ti m e
V
C E ( S AT)
V
B E ( S AT)
C
CBO
C
EBO
td
tr
ts
tf
V
V
pF
pF
ns
ns
ns
ns
Note 2: Pulse Test: Pulse Width < 300
μs,
Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
275
W
-0 .5 V
0
< 1ns
300 ns
-10.9V
10K
W
C S * < 4pF
D elay and R ise Tim e Equivalent Test C ircuit
+3V
275
W
< 1ns
+9.1V
0
10 to 500us
Duty Cycle ~ 2.0%
- 10.9V
10K
W
1N916
C S * < 4pF
Storage and Fall Tim e Equivalent Test Circuit
May 12.2010-REV.00
PAGE . 2
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