CY27C020-200WI datasheet, PDF - EEWORLD Datasheet

CY27C020-200WI: DescriptionUVPROM, 256KX8, 200ns, CMOS, CDIP32, 0.600 INCH, WINDOWED, HERMETIC SEALED, CERDIP-32; Categorystorage storage; File Size224KB，10 Pages; ManufacturerCypress Semiconductor

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CY27C020-200WI Overview

UVPROM, 256KX8, 200ns, CMOS, CDIP32, 0.600 INCH, WINDOWED, HERMETIC SEALED, CERDIP-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
Parts packaging code	DIP
package instruction	DIP,
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	200 ns
JESD-30 code	R-GDIP-T32
JESD-609 code	e0
memory density	2097152 bit
Memory IC Type	UVPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX8
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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