TC534000AP datasheet, PDF - EEWORLD Datasheet

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TC534000AP: DescriptionIC 512K X 8 MASK PROM, 150 ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32, Programmable ROM; Categorystorage storage; File Size84KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC534000AP Overview

IC 512K X 8 MASK PROM, 150 ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32, Programmable ROM

TC534000AP Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	DIP
package instruction	0.600 INCH, PLASTIC, DIP-32
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	150 ns
JESD-30 code	R-PDIP-T32
JESD-609 code	e0
length	42 mm
memory density	4194304 bit
Memory IC Type	MASK ROM
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.8 mm
Maximum standby current	0.00002 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm

TC534000AP Related Products

	TC534000AP	TC534000AF
Description	IC 512K X 8 MASK PROM, 150 ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32, Programmable ROM	IC 512K X 8 MASK PROM, 150 ns, PDSO32, 0.525 INCH, PLASTIC, SOP-32, Programmable ROM
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	Toshiba Semiconductor	Toshiba Semiconductor
Parts packaging code	DIP	SOIC
package instruction	0.600 INCH, PLASTIC, DIP-32	0.525 INCH, PLASTIC, SOP-32
Contacts	32	32
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum access time	150 ns	150 ns
JESD-30 code	R-PDIP-T32	R-PDSO-G32
JESD-609 code	e0	e0
length	42 mm	20.6 mm
memory density	4194304 bit	4194304 bit
Memory IC Type	MASK ROM	MASK ROM
memory width	8	8
Number of functions	1	1
Number of terminals	32	32
word count	524288 words	524288 words
character code	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	512KX8	512KX8
Output characteristics	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	SOP
Encapsulate equivalent code	DIP32,.6	SOP32,.56
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	240
power supply	5 V	5 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	4.8 mm	2.8 mm
Maximum standby current	0.00002 A	0.00002 A
Maximum slew rate	0.05 mA	0.05 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V
surface mount	NO	YES
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING
Terminal pitch	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
width	15.24 mm	10.7 mm

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