UNISONIC TECHNOLOGIES CO., LTD
HE8551
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR
1
DESCRIPTION
The UTC
HE8551
is a low voltage high current small signal PNP
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
PNP SILICON TRANSISTOR
TO-92
1
FEATURES
* Collector current up to 1.5A
* Collector-emitter voltage up to 25 V
* Complimentary to UTC
HE8051
TO-92NL
Lead-free:
HE8551L
Halogen-free: HE8551G
ORDERING INFORMATION
Normal
HE8551-x-T92-B
HE8551-x-T92-K
HE8551-x-T9N-B
HE8551-x-T9N-K
Ordering Number
Lead Free Plating
HE8551L-x-T92-B
HE8551L-x-T92-K
HE8551L-x-T9N-B
HE8551L-x-T9N-K
Halogen Free
HE8551G-x-T92-B
HE8551G-x-T92-K
HE8551G-x-T9N-B
HE8551G-x-T9N-K
Package
TO-92
TO-92
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Box
Bulk
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R201-047.C
HE8551
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Dissipation (Ta=25
℃
)
P
C
1
W
Collector Current
I
C
-1.5
A
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
J
=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(SAT)
V
BE(SAT)
V
BE
f
T
C
ob
TEST CONDITIONS
I
C
=-100μA, I
E
=0
I
C
=-2mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-35V, I
E
=0
V
EB
=-6V, I
c
=0
V
CE
=-1V, I
C
=-5mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
I
C
=-800mA, I
B
=-80mA
I
C
=-800mA, I
B
=-80mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-40
-25
-6
TYP
MAX
UNIT
V
V
V
nA
nA
-100
-100
45
85
40
170
160
80
-0.28
-0.98
-0.66
190
9.0
500
-0.5
-1.2
-1.0
100
V
V
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
C
120-200
D
160-300
E
250-500
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-047.C
HE8551
TYPICAL CHARACTERISTICS
Fig. 1 Static Characteristics
-0.5
-0.4
-0.3
-0.2
I
B
=-3.0mA
10
2
I
B
=-2.5mA
I
B
=-2.0mA
I
B
=-1.5mA
I
B
=-1.0mA
-0.1
I
B
=-0.5mA
0
-0
-0.4
-0.8
-1.2 -1.6 -2.0
Collector-Emitter Voltage, V
CE
( V)
10
1
10
3
PNP SILICON TRANSISTOR
Fig. 2 DC Current Gain
V
CE
=-1V
10
0 -1
-10
-10
0
-10
1
-10
2
Collector Current, I
C
(mA)
-10
3
Current Gain-Bandwidth Product,
f
T
(MHz)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Capacitance, C
ob
(pF)
Saturation Voltage, V
BE
& V
CE
(mV)
Collector Current, I
C
(mA)
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HE8551
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-047.C
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