NTE5875 datasheet, PDF - EEWORLD Datasheet

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NTE5875: DescriptionRectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, DO-4,; CategoryDiscrete semiconductor diode; File Size23KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com; Environmental Compliance

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NTE5875 Overview

Rectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, DO-4,

NTE5875 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NTE
package instruction	O-MUPM-D1
Reach Compliance Code	unknown
ECCN code	EAR99
application	POWER
Shell connection	ANODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JEDEC-95 code	DO-4
JESD-30 code	O-MUPM-D1
Maximum non-repetitive peak forward current	235 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	175 °C
Maximum output current	12 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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Description	Rectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, DO-4,	Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-4,	Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,	Rectifier Diode, 1 Phase, 1 Element, 12A, 50V V(RRM), Silicon, DO-4,	Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-4,	Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-4,	Rectifier Diode, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-4,	Rectifier Diode, 1 Phase, 1 Element, 12A, 500V V(RRM), Silicon, DO-4,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	POWER	POWER	POWER	POWER	POWER	POWER	POWER	POWER
Shell connection	ANODE	ANODE	CATHODE	ANODE	CATHODE	CATHODE	ANODE	ANODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
JEDEC-95 code	DO-4	DO-4	DO-4	DO-4	DO-4	DO-4	DO-4	DO-4
JESD-30 code	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
Maximum non-repetitive peak forward current	235 A	235 A	235 A	235 A	235 A	235 A	235 A	235 A
Number of components	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1
Number of terminals	1	1	1	1	1	1	1	1
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	12 A	12 A	12 A	12 A	12 A	12 A	12 A	12 A
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	300 V	600 V	50 V	300 V	1000 V	400 V	500 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maker	NTE	-	-	-	NTE	NTE	NTE	NTE
package instruction	O-MUPM-D1	-	-	-	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1

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