PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 3N60P
IXTP 3N60P
IXTY 3N60P
V
DSS
I
D25
R
DS(on)
= 600
= 3.0
≤
2.9
V
A
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150° C, R
G
= 30
Ω
T
C
= 25° C
Maximum Ratings
600
600
±
30
±
40
3.0
6
3
10
100
5
70
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
°C
g
g
g
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
G
D S
(TAB)
TO-252 (IXTY)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
TO-220
TO-263
TO-252
300
260
4
3
0.35
G
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
l
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 50
µA
V
GS
=
±
30 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
600
3.0
5.5
±
100
5
50
2.9
V
V
nA
µA
µA
Ω
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
l
l
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
, Note 1
© 2006 IXYS All rights reserved
DS99449E(04/06)
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min.
Typ.
Max.
2.2
3.4
411
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
44
6.4
25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 30
Ω
(External)
25
58
22
9.8
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
3.4
3.5
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.80° C/W
(TO-220)
0.25
°
CW
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
TO-220 (IXTP) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 20 V; I
D
= 0.5 I
D25
, Note 1
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Repetitive
I
F
= I
S
, V
GS
= 0 V, Note 1
I
F
= 3 A, -di/dt = 100 A/µs
V
R
= 100 V, V
GS
= 0 V
Characteristic Values
T
J
= 25° C unless otherwise specified)
Min.
Typ.
Max.
3
9
1.5
500
A
A
V
ns
TO-252 (IXTY) Outline
Note 1:
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
TO-263 (IXTA) Outline
Pins: 1 - Gate
4 - Drain
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19
0.89
0
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
3 - Source
Inches
Min.
0.086
0.035
0
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
Max.
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64
0.89
2.54
1.02
1.27
2.92
0.090 BSC
0.180 BSC
0.370
0.020
0.025
0.035
0.100
0.410
0.040
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Fig. 1. Output Characteristics
@ 25
º
C
3
2.7
2.4
2.1
V
GS
= 10V
8V
7V
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
7
8
9
10
0
3
6
9
12
15
18
21
24
27
30
6V
V
GS
= 10V
8V
Fig. 2. Extended Output Characteristics
@ 25
º
C
I
D
- Amperes
1.8
1.5
1.2
0.9
0.6
0.3
0
6V
V
D S
- Volts
Fig. 3. Output Characteristics
@ 125
º
C
3
2.7
2.4
V
GS
= 10V
8V
7V
3.1
2.8
V
GS
= 10V
I
D
- Amperes
7V
V
D S
- Volts
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
I
D
- Amperes
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
0
2
4
6
5V
6V
R
D S ( o n )
- Normalized
2.5
2.2
1.9
1.6
1.3
1
0.7
0.4
I
D
= 3A
I
D
= 1.5A
V
D S
- Volts
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
3.3
3
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
3
2.8
2.6
V
GS
= 10V
T
J
= 125
º
C
2.7
2.4
R
D S ( o n )
- Normalized
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
1
2
3
4
5
6
T
J
= 25
º
C
I
D
- Amperes
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
© 2006 IXYS All rights reserved
T
C
- Degrees Centigrade
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Fig. 7. Input Adm ittance
4.5
4
3.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
4
4.5
5
5.5
6
6.5
7
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Transconductance
2.5
2
1.5
1
T
J
=125
º
C
25
º
C
-40
º
C
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
9
8
7
10
9
8
7
V
DS
= 300V
I
D
= 1.5A
I
G
= 10mA
g
f s
- Siemens
I
D
- Amperes
3
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
6
V
G S
- Volts
T
J
= 25
º
C
5
4
3
2
1
0
0.4
0.5
0.6
0.7
0.8
0.9
T
J
= 125
º
C
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
V
S D
- Volts
Fig. 11. Capacitance
1000
10.0
Q
G
- nanoCoulombs
Fig. 13. Maxim um Transient Therm al
Resistance
Capacitance - picoFarads
C iss
100
R
( t h ) J C
-
º
C / W
C oss
10
C rss
f = 1MHz
1
0
5
10
15
20
25
30
35
40
1.0
0.1
0.1
1
10
100
1000
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - milliseconds
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