NAND512R4B2BZA6T datasheet, PDF

NAND512R4B2BZA6T: Description32MX16 FLASH 1.8V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63; Categorystorage storage; File Size943KB，58 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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NAND512R4B2BZA6T Overview

32MX16 FLASH 1.8V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	63
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	25000 ns
JESD-30 code	R-PBGA-B63
JESD-609 code	e0
length	12 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	63
word count	33554432 words
character code	32000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1.05 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	9.5 mm

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