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BLV10

Description
TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC PACKAGE-4, BIP RF Power
CategoryDiscrete semiconductor    The transistor   
File Size449KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLV10 Overview

TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC PACKAGE-4, BIP RF Power

BLV10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instructionCERAMIC PACKAGE-4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage18 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
Minimum power gain (Gp)9 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)950 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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