CYM1423PD-55C datasheet, PDF - EEWORLD Datasheet

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CYM1423PD-55C: DescriptionSRAM Module, 128KX8, 55ns, CMOS; Categorystorage storage; File Size35KB，1 Pages; ManufacturerCypress Semiconductor

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CYM1423PD-55C Overview

SRAM Module, 128KX8, 55ns, CMOS

CYM1423PD-55C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	55 ns
Other features	AUTOMATIC POWER-DOWN
I/O type	COMMON
JESD-30 code	R-XDMA-T32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.08 A
Minimum standby current	4.5 V
Maximum slew rate	0.21 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

CYM1423PD-55C Related Products

	CYM1423PD-55C	CYM1423PD-45C	CYM1423PD-70C
Description	SRAM Module, 128KX8, 55ns, CMOS	SRAM Module, 128KX8, 45ns, CMOS	SRAM Module, 128KX8, 70ns, CMOS
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum access time	55 ns	45 ns	70 ns
Other features	AUTOMATIC POWER-DOWN	AUTOMATIC POWER-DOWN	AUTOMATIC POWER-DOWN
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32
JESD-609 code	e0	e0	e0
memory density	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	32	32	32
word count	131072 words	131072 words	131072 words
character code	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIP	DIP	DIP
Encapsulate equivalent code	DIP32,.6	DIP32,.6	DIP32,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.08 A	0.08 A	0.08 A
Minimum standby current	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.21 mA	0.21 mA	0.21 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL
Maker	Cypress Semiconductor	-	Cypress Semiconductor

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