HLX6228TVN datasheet, PDF - EEWORLD Datasheet

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HLX6228TVN: DescriptionStandard SRAM, 128KX8, 30ns, CMOS, CDFP32, 0.820 X 0.600 INCH, CERAMIC, FP-32; Categorystorage storage; File Size165KB，12 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

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HLX6228TVN Overview

Standard SRAM, 128KX8, 30ns, CMOS, CDFP32, 0.820 X 0.600 INCH, CERAMIC, FP-32

HLX6228TVN Parametric

Parameter Name	Attribute value
Maker	Honeywell
Parts packaging code	DFP
package instruction	DFP,
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	30 ns
JESD-30 code	R-CDFP-F32
length	20.83 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	3.81 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
width	15.24 mm

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Military & Space Products

HLX6228

128K x 8 STATIC RAM—Low Power SOI

FEATURES

RADIATION

• Fabricated with RICMOS

™

IV Silicon on Insulator

(SOI) 0.7

µm

Low Power Process (L

eff

= 0.55

µm)

• Total Dose Hardness through 1x10

rad(SiO

)

• Neutron Hardness through 1x10

-2

• Dynamic and Static Transient Upset Hardness

through 1x10

rad(Si)/s

• Dose Rate Survivability through 1x10

rad(Si)/s

• Soft Error Rate of <1x10

-10

Upsets/bit-day in Geosyn-

chronous Orbit

• No Latchup

OTHER

• Read/Write Cycle Times

≤

30 ns (-55 to 125°C)

• Typical Operating Power <9 mW/MHz

• JEDEC Standard Low Voltage

CMOS Compatible I/O

• Single 3.3 V

0.3 V Power Supply

• Asynchronous Operation

• Packaging Options

– 32-Lead CFP (0.820 in. x 0.600 in.)

– 40-Lead CFP (0.775 in. x 0.710 in.)

GENERAL DESCRIPTION

The 128K x 8 Radiation Hardened Static RAM is a high

performance 131,072 word x 8-bit static random access

memory with industry-standard functionality. It is fabricated

with Honeywell’s radiation hardened technology, and is

designed for use in low voltage systems operating in radiation

environments. The RAM operates over the full military

temperature range and requires only a single 3.3 V

0.3V

power supply. The RAM is compatible with JEDEC standard

low voltage CMOS I/O. Power consumption is typically less

than 9 mW/MHz in operation, and less than 2 mW when de-

selected. The RAM read operation is fully asynchronous, with

an associated typical access time of 30 ns at 3.3 V.

Honeywell’s enhanced SOI RICMOS™ IV (Radiation Insensi-

tive CMOS) technology is radiation hardened through the use

of advanced and proprietary design, layout and process

hardening techniques.The RICMOS™ IV low power process is

a SIMOX CMOS technology with a 150 Å gate oxide and a

minimum drawn feature size of 0.7

µm

(0.55

µm

effective gate

length—L

eff

). Additional features include tungsten via plugs,

Honeywell’s proprietary SHARP planarization process and a

lightly doped drain (LDD) structure for improved short channel

reliability. A 7 transistor (7T) memory cell is used for superior

single event upset hardening, while three layer metal power

bussing and the low collection volume SIMOX substrate

provide improved dose rate hardening.

Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com

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