Amplifier, Distributed Power, 0.5 W
2.0-18.0 GHz
Features
♦
♦
♦
♦
0.5 Watt Saturated Output Power Level
Variable Drain Voltage (5-10V) Operation
MSAG™ Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
MAAPGM0053-DIE
903217 —
Preliminary Information
Description
The MAAPGM0053-Die is a single stage power amplifier with on-
chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier stage
or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufac-
turing processes, planar processing of ion implanted transistors,
multiple implant capability enabling power, low-noise, switch and
digital FETs on a single chip, and polyimide scratch protection for
ease of use with automated manufacturing processes. The use of
refractory metals and the absence of platinum in the gate metal for-
mulation prevents hydrogen poisoning when employed in hermetic
packaging.
Primary Applications
♦
Test Equipment
♦
Electronic Warfare
♦
Radar
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50Ω, V
DD
= 8V, I
DQ
≈
250 mA
2
, P
in
= 22 dBm
Parameter
Bandwidth
Output Power
1 dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Gate Supply Current
Drain Supply Current
Noise Figure
1.
2.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Symbol
f
P
OUT
P1dB
G
VSWR
VSWR
I
GG
I
DD
NF
Typical
2.0-18.0
27.0
26
6
1.5:1
1.5:1
3
400
7
Units
GHz
dBm
dB
dB
mA
mA
dB
T
B
= MMIC Base Temperature
Adjust V
GG
between –2.4 and –1.5V to achieve I
DQ
indicated.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Distributed Power, 0.5 W
2.0-18.0 GHz
Maximum Operating Conditions
3
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF, 40% Idss)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Die Attach Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
25.0
+12.0
-3.0
400
4.0
180
-55 to +150
310
MAAPGM0053-DIE
903217 —
Preliminary Information
Units
dBm
V
V
mA
W
°C
°C
°C
3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Gate Supply Voltage
Input Power
Junction Temperature
Thermal Resistance
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
T
J
Θ
JC
T
B
19.6
Note 4
Min
5.0
-2.4
Typ
8.0
-2.0
22.0
Max
10.0
-1.5
24.0
150
Unit
V
V
dBm
°C
°C/W
°C
4. Maximum MMIC Base Temperature = 150°C —Θ
JC
* V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8 V.
3. Adjust
V
GG
to set I
DQ
.
4. Set RF input.
5.
Power down sequence in reverse. Turn V
GG
off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
2
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Distributed Power, 0.5 W
2.0-18.0 GHz
35
33
31
29
Power Out
Drain Current
MAAPGM0053-DIE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
9
8
7
Gain
Input VSWR
Output VSWR
903217 —
Preliminary Information
6
5
Power Out (dBm)
27
25
23
21
19
17
15
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Drain Current (A)
6
Gain (dB)
5
4
3
2
1
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
4
VSWR
3
2
1
Frequency (GHz)
Figure 1. Output Power and Drain Current at P
in
= 22 dBm and V
DD
= 8V.
Frequency (GHz)
Figure 2: Small Signal Gain and VSWR at V
D
=5V
30
28
26
24
0.50
0.46
0.42
0.38
30
28
26
24
0.50
0.46
0.42
0.38
0.34
0.30
0.26
0.22
0.18
Po @ 2GHz
Ids @ 2GHz
Po @ 6GHz
Ids @ 6GHz
Po @ 10GHz
Ids @ 10GHz
Po @ 14GHz
Ids @ 14GHz
Po @ 18GHz
Ids @ 18GHz
Power Out (dBm)
Drain Current (A)
Power Out (dBm)
22
20
18
16
14
12
10
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Po @ 2GHz
Ids @ 2GHz
Po @ 6GHz
Ids @ 6GHz
Po @ 10GHz
Ids @ 10GHz
Po @ 14GHz
Ids @ 14GHz
Po @ 18GHz
Ids @ 18GHz
0.34
0.30
0.26
0.22
0.18
0.14
0.10
22
20
18
16
14
12
10
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
0.14
0.10
Power In (dBm)
Figure 3. Output Power and Drain Current vs. Input Power at V
DD
= 5V.
Power In (dBm)
Figure 4. Output Power and Drain Current vs. Input Power at V
DD
= 8V.
30
28
26
24
0.50
0.46
0.42
0.38
0.34
0.30
0.26
0.22
0.18
Po @ 2GHz
Ids @ 2GHz
Po @ 6GHz
Ids @ 6GHz
Po @ 10GHz
Ids @ 10GHz
Po @ 14GHz
Ids @ 14GHz
Po @ 18GHz
Ids @ 18GHz
10
9
8
7
Power Out (dBm)
22
20
18
16
14
12
10
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Drain Current (A)
6
Gain (dB)
5
4
3
2
1
0
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Gain @ 2GHz
Gain @ 6GHz
Gain @ 10GHz
Gain @ 14GHz
Gain @ 18GHz
0.14
0.10
Power In (dBm)
Power Out (dBm)
Figure 5. Output Power and Drain Current vs. Input Power at V
DD
= 10V.
Figure 6. Compression Characteritics, Gain vs Power Out at V
DD
= 8V.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Drain Current (A)
Amplifier, Distributed Power, 0.5 W
2.0-18.0 GHz
Mechanical Information
Chip Size: 3.000 x 2.000 x 0.075 mm
1.042mm
0.137mm
MAAPGM0053-DIE
903217 —
Preliminary Information
(
118 x 79 x 3 mils)
3.000mm
2.000mm
1.838mm
GND:G
GND:G
VD
GND:D
GND:G
GND:G
GND:G
OUT
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
G ND:G
G ND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
G ND:G
G ND:G
1.216mm
G ND:G
GND:G
GND:G
0.467mm
0.177mm
IN
GND:G
G ND:G
GND:G
VG
GND:D
G ND:G
0
2.341mm
2.843mm
0
Figure 7. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
Size (μm)
100 x 150
150 x 150
150 x 150
Size (mils)
4x8
8x6
4x6
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
GND:G
GND:G
G ND:G
Amplifier, Distributed Power, 0.5 W
2.0-18.0 GHz
Assembly and Bonding Diagram
V
DD
0.1
μF
MAAPGM0053-DIE
903217 —
Preliminary Information
100 pF
VD
GN D:G
GN D:G
GND:D
RF
OUT
GND:G
OUT
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
RF
IN
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND :G
GND:G
GND:G
IN
GND:G
GND:G
G ND:G
VG
GND:D
GN D:G
GN D:G
GN D:G
GND:G
G ND:G
G ND:G
GND:G
V
GG
100 pF
0.1
μF
Figure 6. Recommended bonding diagram
for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW testing.
Assembly Instructions:
Die attach:
Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding:
Bond @ 160 °C using standard ball or thermal compression wedge bond techniques.
For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge
bonds of shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to V
GG
before applying positive bias to V
DD
to prevent
damage to amplifier.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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