EDO DRAM Module, 4MX32, 60ns, CMOS, SIP-72
| Parameter Name | Attribute value |
| Maker | Hitachi （Renesas ） |
| Parts packaging code | MODULE |
| package instruction | SIMM, SSIM72 |
| Contacts | 72 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | FAST PAGE WITH EDO |
| Maximum access time | 60 ns |
| I/O type | COMMON |
| JESD-30 code | R-XSMA-N72 |
| memory density | 134217728 bit |
| Memory IC Type | EDO DRAM MODULE |
| memory width | 32 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 72 |
| word count | 4194304 words |
| character code | 4000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 4MX32 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| encapsulated code | SIMM |
| Encapsulate equivalent code | SSIM72 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 2048 |
| Maximum seat height | 25.4 mm |
| self refresh | NO |
| Maximum standby current | 0.0012 A |
| Maximum slew rate | 0.72 mA |
| Maximum supply voltage (Vsup) | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | SINGLE |
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