Q67000-S245 datasheet, PDF - EEWORLD Datasheet

Q67000-S245: DescriptionSmall Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size138KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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Q67000-S245 Overview

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

Parameter Name	Attribute value
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	0.17 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	6 pF
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON

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