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KSR2204BU

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size65KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSR2204BU Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN

KSR2204BU Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-92S
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)68
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz

KSR2204BU Preview

KSR2204
KSR2204
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=47KΩ, R
2
=47KΩ)
• Complement to KSR1204
1
TO-92S
1.Emitter 2. Collector 3. Base
Equivalent Circuit
C
R1
B
R2
PNP Epitaxial Silicon Transistor
E
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-50
-50
-10
-100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
= -10µA, I
E
=0
I
C
= -100µA, I
B
=0
V
CB
= -40V, I
E
=0
V
CE
= -5V, I
C
= -5mA
I
C
= -10mA, I
B
= -0.5mA
V
CE
= -10V, I
C
= -5mA
V
CB
= -10V, I
E
=0
f=1.0MHz
V
CE
= -5V, I
C
= -100µA
V
CE
= -0.3V, I
C
= -2mA
32
0.9
47
1
-0.5
-3
62
1.1
200
5.5
68
-0.3
V
MHz
pF
V
V
KΩ
Min.
-50
-50
-0.1
Typ.
Max.
Units
V
V
µA
©2001 Fairchild Semiconductor Corporation
Rev. A2, July 2001
KSR2204
Typical Characteristics
1000
-100
V
CE
= - 5V
R
1
= 47 K
R
2
= 47 K
V
CE
= - 0.3V
R
1
= 47 K
R
2
= 47 K
V
I
(on)[V], INPUT VOLTAGE
h
FE
, DC CURRENT GAIN
-10
100
-1
10
-1
-10
-100
-1000
-0.1
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
400
I
C
[
µ
A], COLLECTOR CURRENT
-1000
P
C
[mW], POWER DISSIPATION
V
CE
= - 5V
R
1
= 47 K
R
2
= 47 K
350
300
250
200
-100
150
100
50
-10
-0.0
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
0
25
50
o
75
100
125
150
175
V
I
(OFF)[V], INPUT OFF VOLTAGE
T
a
[ C], AMBIENT TEMPERATURE
Figure 3. Input Off Voltage
Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A2, July 2001
KSR2204
Package Demensions
TO-92S
4.00
±0.20
2.31
±0.20
0.66 MAX.
(1.10)
0.49
±0.10
1.27TYP
[1.27±0.20]
3.72
±0.20
1.27TYP
[1.27±0.20]
14.47
±0.30
3.70
±0.20
0.35
–0.05
+0.10
2.86
±0.20
0.77
±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A2, July 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST
®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
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Switching Application (Bias Resister Built
Markets and
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applications
New products
q
Switchng circuit, Inverter, Interface
Product selection and
circuit, Driver Circuit
parametric search
q
Built in bias Resistor (R =47KΩ,
1
Cross-reference
R
2
=47KΩ)
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q
Complement to KSR1204
technical information
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Product status/pricing/packaging
Product
KSR2204TA
KSR2204BU
Product status
Full Production
Full Production
Pricing*
$0.058
$0.058
Package type
TO-92S
TO-92S
Leads
3
3
Packing method
TAPE REEL
BULK
Product Folders and
Datasheets
Related Links
Request samples
Dotted line
How to order products
Dotted line
Product Change Notices
(PCNs)
Dotted line
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representatives
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Application
notes
Datasheet
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KSR2204BU Related Products

KSR2204BU KSR2204TA
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
Parts packaging code TO-92S TO-92S
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 68 68
JESD-30 code R-PSIP-T3 R-PSIP-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz

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