Wide Band Low Power Amplifier, 0MHz Min, 5500MHz Max, 1 Func, BIPolar, SOT-86, 4 PIN
SGA-6286 Parametric
Parameter Name
Attribute value
Is it Rohs certified?
incompatible
Maker
Qorvo
package instruction
SOT-86, 4 PIN
Reach Compliance Code
unknown
Characteristic impedance
50 Ω
structure
COMPONENT
Gain
12.5 dB
Maximum input power (CW)
18 dBm
JESD-609 code
e0
Installation features
SURFACE MOUNT
Number of functions
1
Number of terminals
4
Maximum operating frequency
5500 MHz
Minimum operating frequency
Maximum operating temperature
85 °C
Minimum operating temperature
-40 °C
Package body material
PLASTIC/EPOXY
Encapsulate equivalent code
SL,4GW-LD,.085CIR
power supply
4 V
RF/Microwave Device Types
WIDE BAND LOW POWER
Maximum slew rate
83 mA
surface mount
YES
technology
BIPOLAR
Terminal surface
Tin/Lead (Sn/Pb)
SGA-6286 Preview
Product Description
Stanford Microdevices SGA-6286 is a high performance SiGe
Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration featuring 1 micron emitters provides high F
T
and
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 75mA , the SGA-6286 typically provides +35 dBm output
IP3, 13.8 dB of gain, and +19 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Freq. @T
L
=+25°C
20
16
Gain (dB)
SGA-6286
DC-5500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
High Gain : 12.4 dB at 1950 MHz
Cascadable 50 Ohm
Patented SiGe Technology
0
Return Loss (dB)
-8
ORL
GAIN
IRL
12
8
4
0
0.00
1.00
-16
-24
-32
-40
Operates From Single Supply
Low Thermal Resistance Package
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
Units
dB
dB
dB
dBm
dBm
dBm
dBm
M Hz
dB
dB
dB
V
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
3.6
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
Min.
12.5
Ty p.
13.8
12.4
11.2
19.0
18.5
35.0
33.0
5500
14.6
20.2
4.3
4.0
97
4.4
Max.
15.2
2.00
3.00
4.00
Frequency (GHz)
5.00
6.00
Sy mbol
G
P
1dB
OIP
3
Parameter
Small Signal Gain
Output Pow er at 1dB Compression
Output Third Order Intercept Point
(Pow er out per tone = 0dBm)
Bandw idth
Determined by Return Loss (<-10dB)
IRL
ORL
NF
V
D
R
Th
Input Return Loss
Output Return Loss
Noise Figure
Device Voltage
Thermal Resistance
V
S
= 8 V
R
BIAS
= 51 Ohms
I
D
= 75 mA Typ.
T
L
= 25ºC
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-100613 Rev B
Preliminary
SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Sy mbol
Parameter
Unit
100
Frequency
Frequency (MHz)
Frequency (MHz)(MHz)
500
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Small Signal Gain
Output Third Order Intercept Point
Output Pow er at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V
S
= 8 V
V
S
= 8 V
R
BIAS
= 51 Ohms
R
BIAS
= 39 Ohms
dB
dBm
dBm
dB
dB
dB
dB
14.0
37.0
18.7
18.8
35.7
18.4
4.0
13.9
36.0
19.0
17.4
36.3
18.6
3.9
13.8
35.0
19.0
15.8
23.8
18.8
3.9
12.4
33.0
17.7
14.6
13.9
18.8
4.3
11.2
31.4
16.8
15.5
13.4
18.5
4.5
9.6
28.1
15.2
20.6
16.4
17.0
4.8
Test Conditions:
= 75 mA Typ.
II
D
= 80 mA Typ.
D
T = 25ºC
T
LL
= 25ºC
OIP Tone Spacing = 1 MHz, Pout per tone = 0 dBm
OIP
33
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z = 50 Ohms
Z
S
= Z
LL
= 50 Ohms
Noise Figure vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
6.0
5.0
Noise Figure (dB)
4.0
3.0
2.0
1.0
0.0
0
1
2
3
Frequency (GHz)
4
5
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Pow er
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Absolute Limit
1
50
mA
6V
+16 dBm
+150°C
-40°C to +85°C
+150°C
T
L
=+25ºC
Max.
Storage Temp
.
Operation of this device beyond any one of these limits may
cause permanent damage.
Bias Conditions should also satisfy the following
expression: I
D
V
D
(max) < (T
J
- T
L
)/R
th
OIP
3
vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
40
36
OIP
3
(dBm)
32
28
24
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
20
+25°C
-40°C
P
1dB
vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
T
L
18
P
1dB
(dBm)
16
14
+25°C
+85°C
12
10
0.0
0.5
1.0
1.5
2.0
T
L
2.5
-40°C
+85°C
3.0
3.5
Frequency (GHz)
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-100613 Rev B
Preliminary
SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier
S
21
vs. Frequency
S
11
vs. Frequency
T
L
20
16
S
21
(dB)
12
8
4
0
0
1
V
D
= 4.0 V, I
D
= 75 mA
-5
+25°C
-40°C
+85°C
V
D
= 4.0 V, I
D
= 75 mA
+25°C
-40°C
+85°C
T
L
-10
S
11
(dB)
-15
-20
-25
-30
-35
2
3
4
Frequency (GHz)
5
6
0
1
2
3
4
Frequency (GHz)
5
6
-5
-10
S
12
(dB)
-15
-20
-25
-30
0
1
V
D
= 4.0 V, I
D
= 75 mA
S
12
vs. Frequency
-5
-10
S
22
(dB)
-15
-20
-25
-30
-35
V
D
= 4.0 V, I
D
= 75 mA
S
22
vs. Frequency
T
L
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
6
6
90
85
V
D
vs. I
D
over Temperature for fixed
V
S
= 8 V, R
BIAS
= 51 ohms *
4.60
4.40
+25°C
-40°C
V
D
vs. Temperature for Constant I
D
= 75 mA
+85°C
V
D
(Volts)
80
I
D
(mA)
75
70
65
60
3.6
3.8
4.20
4.00
3.80
3.60
-40
4.0
V
D
(Volts)
4.2
4.4
-15
10
35
Temperature (°C)
60
85
* Note: In the applications circuit on page 4, R
BIAS
compensates for voltage and current variation over temperature.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-100613 Rev B
Preliminary
SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier
SGA-6286 Basic Application Circuit
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
V
S
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
4
1
SGA-6286
3
2
C
B
RF out
Recommended Bias Resistor Values for I
D
=75mA
Supply Voltage(V
S
)
R
BIAS
6V
27
8V
51
10 V
82
12 V
110
V
S
R
BIAS
Note: R
BIAS
provides DC bias stability over temperature.
1 uF
1000 pF
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
L
C
C
D
A62
C
B
C
B
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Part Identification Marking
The part will be marked with an A62 designator on
the top surface of the package.
3
Pin #
1
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
2
GND
4
A62
2
3
1
For package dimensions, refer to outline drawing at
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