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Datasheet> All Categories > Discrete semiconductor> The transistor> UPA810T-T1FB-A
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UPA810T-T1FB-A

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6
CategoryDiscrete semiconductor    The transistor   
File Size44KB，6 Pages
ManufacturerNEC Electronics
Environmental Compliance  
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UPA810T-T1FB-A Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6

UPA810T-T1FB-A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-based maximum capacity1.5 pF
Collector-emitter maximum voltage12 V
ConfigurationSEPARATE, 2 ELEMENTS
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G6
JESD-609 codee6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)4500 MHz

UPA810T-T1FB-A Preview

PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA810T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 6-PIN 2
×
2SC4226) SMALL MINI MOLD
The
µ
PA810T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
FEATURES
• Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
0.65 0.65
2.0±0.2
|S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• A Small Mini Mold Package Adopted
• Built-in 2 Transistors (2
×
2SC4226)
1.3
2
3
ORDERING INFORMATION
0.9±0.1
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µ
PA810T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
20
12
3
100
150 in 1 element
200 in 2 elements
Note
150
–65 to +150
UNIT
V
6
Q
1
1
V
V
mA
mW
5
0 to 0.1
4
Q
2
2
3
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Emitter (Q1)
2. Base (Q2)
6. Base (Q1)
3. Collector (Q2)
Junction Temperature
Storage Temperature
T
j
T
stg
˚C
˚C
Note
110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. P11463EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
0.15
–0
+0.1
µ
PA810T
0.7
4
5
0.2
–0
1
6
• High Gain
+0.1
XY
1996
µ
PA810T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
NF
h
FE1
/h
FE2
CONDITION
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA
Note 1
V
CE
= 3 V, I
C
= 7 mA
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
7
70
3.0
4.5
0.7
9
1.2
2.5
1.5
MIN.
TYP.
MAX.
1
1
250
GHz
pF
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
24R
70 to 140
GB
25R
125 to 250
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
P
T
– T
A
Characteristics
Total Power Dissipation P
T
(mW)
20
V
CE
= 3 V
I
C
– V
BE
Characteristics
2
en
ts
Pe
rE
in
To
lem
ta
en
l
Collector Current I
C
(mA)
200
El
em
t
10
100
0
50
100
150
0
0.5
Base to Emitter Voltage V
BE
(V)
h
FE
– I
C
Characteristics
1.0
Ambient Temperature T
A
(°C)
I
C
– V
CE
Characteristics
25
Collector Current I
C
(mA)
I
B
=
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
200
V
CE
= 3 V
DC Current Gain h
FE
20
100
15
10
5
50
60
µ
A
40
µ
A
20
µ
A
5
Collector to Emitter Voltage V
CE
(V)
10
20
0
10
0.5
1
5
10
50
Collector Current I
C
(mA)
2
µ
PA810T
f
T
– I
C
Characteristics
l S
21e
l
2
– I
C
Characteristics
20
Gain Bandwidth Product f
T
(GH
Z
)
15
V
CE
= 3 V
f = 1.0 GH
Z
Insertion Power Gain l S
21e
l
2
(dB)
V
CE
= 3 V
f = 1.0 GH
Z
10
10
5
5
2
1
0.5
1
5
10
Collector Current I
C
(mA)
50
0
0.5
1
5
10
50 100
Collector Current I
C
(mA)
NF – I
C
Characteristics
l S
21e
l
2
– f Characteristics
Insertion Power Gain l S
21e
l
2
(dB)
V
CE
= 3 V
f = 1 GH
Z
6
24
20
16
12
8
4
0
0.1
V
CE
= 3 V
I
C
= 7 mA
Noise Figure (dB)
4
2
0
0.5
1.0
5.0
10
50 100
0.2
0.5
1.0
2.0
5.0
Collector Current I
C
(mA)
Frequency f (GH
Z
)
C
re
– V
CB
Characteristics
5.0
Feed-back Capacitance C
re
(pF)
f = 1 MH
Z
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage V
CB
(V)
3
µ
PA810T
S-PARAMETERS
V
CE
= 3 V, I
C
= 1 mA
FREQUENCY
MHz
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
MAG
0.959
0.920
0.838
0.810
0.775
0.767
0.745
0.722
0.711
0.715
0.708
0.697
0.688
0.675
0.706
0.725
0.723
0.718
0.702
0.716
S
11
ANG
–26.1
–48.3
–69.2
–85.6
–100.0
–115.0
–127.0
–137.7
–146.4
–155.0
–163.2
–171.9
–177.1
178.8
173.6
168.7
161.1
156.4
152.5
149.8
MAG
3.680
3.305
2.972
2.612
2.367
2.149
1.986
1.854
1.655
1.541
1.414
1.340
1.271
1.174
1.119
1.058
1.007
0.998
0.957
0.943
S
21
ANG
162.0
146.4
131.3
121.4
110.9
104.1
93.8
87.9
80.0
74.0
69.2
63.3
59.5
54.4
49.8
47.5
43.9
40.8
36.2
31.1
MAG
0.045
0.080
0.111
0.128
0.137
0.147
0.147
0.150
0.143
0.140
0.136
0.134
0.132
0.122
0.118
0.111
0.114
0.119
0.126
0.137
S
12
ANG
77.2
63.8
50.1
43.5
34.7
30.8
25.1
21.5
20.5
17.1
19.0
18.0
18.5
20.1
21.9
29.5
33.2
40.8
44.1
47.1
MAG
0.983
0.937
0.863
0.815
0.745
0.724
0.693
0.682
0.668
0.644
0.623
0.594
0.577
0.559
0.559
0.549
0.547
0.537
0.526
0.514
S
22
ANG
–9.0
–15.8
–23.0
–26.3
–29.1
–31.7
–33.2
–36.5
–39.2
–43.7
–46.8
–50.1
–52.7
–55.3
–58.3
–61.9
–66.8
–71.6
–76.8
–81.8
V
CE
= 3 V, I
C
= 3 mA
FREQUENCY
MHz
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
MAG
0.878
0.788
0.685
0.634
0.603
0.591
0.573
0.566
0.563
0.573
0.577
0.572
0.563
0.555
0.584
0.603
0.608
0.607
0.598
0.612
S
11
ANG
–39.3
–69.5
–93.9
–111.2
–125.2
–137.9
–148.5
–156.8
–163.4
–170.3
–177.2
175.4
171.4
168.5
164.9
161.2
154.7
150.8
147.7
145.8
MAG
9.289
7.675
6.222
5.151
4.360
3.838
3.378
3.215
2.821
2.594
2.359
2.200
2.084
1.904
1.803
1.700
1.616
1.591
1.523
1.488
S
21
ANG
153.2
133.1
117.5
108.1
99.6
94.6
86.0
82.1
75.6
70.7
67.2
62.2
58.8
54.8
50.5
48.7
45.4
42.4
38.1
32.8
MAG
0.041
0.068
0.087
0.094
0.100
0.105
0.107
0.113
0.114
0.118
0.122
0.128
0.136
0.138
0.146
0.150
0.161
0.173
0.183
0.197
S
12
ANG
71.5
55.9
44.8
41.7
37.3
37.7
36.4
36.7
38.8
38.3
41.5
41.7
42.9
43.8
44.3
48.4
47.8
50.0
48.8
47.7
MAG
0.941
0.807
0.674
0.588
0.511
0.475
0.443
0.425
0.408
0.385
0.365
0.343
0.326
0.309
0.301
0.290
0.281
0.268
0.255
0.244
S
22
ANG
–17.3
–28.4
–36.5
–39.0
–40.5
–41.3
–41.5
–43.2
–45.0
–48.2
–50.7
–53.3
–55.1
–57.1
–59.6
–62.8
–67.3
–72.3
–77.4
–82.6
4
µ
PA810T
S-PARAMETERS
V
CE
= 3 V, I
C
= 5 mA
FREQUENCY
MHz
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
MAG
0.803
0.693
0.594
0.548
0.528
0.520
0.508
0.505
0.505
0.519
0.527
0.525
0.518
0.513
0.539
0.558
0.565
0.567
0.561
0.574
S
11
ANG
–48.9
–83.5
–108.3
–125.1
–138.0
–149.3
–158.7
–165.6
–171.1
–176.9
177.0
170.1
166.6
164.1
161.2
158.0
152.1
148.5
145.6
144.1
MAG
13.450
10.285
7.895
6.305
5.237
4.554
3.961
3.624
3.283
3.009
2.729
2.536
2.399
2.188
2.067
1.945
1.847
1.814
1.737
1.693
S
21
ANG
147.0
124.9
110.2
101.7
94.4
90.4
82.8
79.1
73.6
69.1
66.0
61.5
58.3
54.6
50.6
48.9
46.0
43.0
38.9
33.8
MAG
0.040
0.059
0.073
0.080
0.086
0.092
0.097
0.106
0.112
0.120
0.127
0.135
0.147
0.151
0.162
0.169
0.181
0.194
0.205
0.219
S
12
ANG
65.9
54.1
45.6
44.7
42.6
45.2
45.4
46.4
48.6
48.0
50.1
49.4
49.9
50.2
49.5
52.1
50.8
51.9
49.8
47.9
MAG
0.892
0.705
0.557
0.468
0.398
0.363
0.334
0.317
0.301
0.279
0.262
0.243
0.227
0.211
0.202
0.190
0.179
0.166
0.152
0.142
S
22
ANG
–23.3
–36.2
–43.4
–45.0
–45.4
–45.2
–44.8
–46.0
–47.1
–49.9
–52.2
–54.7
–56.2
–57.7
–60.2
–63.7
–68.3
–74.4
–80.5
–86.6
V
CE
= 3 V, I
C
= 7 mA
FREQUENCY
MHz
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
MAG
0.729
0.612
0.529
0.492
0.481
0.476
0.469
0.469
0.471
0.487
0.497
0.496
0.490
0.485
0.513
0.531
0.539
0.543
0.539
0.552
S
11
ANG
–58.5
–95.4
–119.9
–135.6
–147.4
–157.4
–166.0
–171.8
–176.4
178.6
172.9
166.5
163.3
161.2
158.7
155.9
150.3
146.9
144.2
142.6
MAG
17.087
12.153
9.023
7.052
5.805
4.986
4.341
3.951
3.408
3.268
2.959
2.748
2.598
2.365
2.230
2.100
1.990
1.955
1.867
1.820
S
21
ANG
141.0
118.7
105.1
97.4
91.0
87.6
80.7
77.3
71.8
68.1
65.2
60.9
57.8
54.4
50.5
49.0
46.2
43.4
39.4
34.3
MAG
0.037
0.052
0.064
0.072
0.078
0.087
0.094
0.106
0.112
0.123
0.132
0.142
0.155
0.161
0.172
0.180
0.194
0.207
0.218
0.233
S
12
ANG
66.1
52.6
47.7
48.8
49.2
51.9
52.3
53.1
54.6
53.4
55.1
53.9
54.0
53.4
52.0
54.1
52.2
52.8
50.2
47.9
MAG
0.838
0.618
0.467
0.382
0.321
0.291
0.265
0.248
0.233
0.213
0.197
0.179
0.164
0.149
0.140
0.127
0.115
0.102
0.088
0.080
S
22
ANG
–29.0
–42.2
–48.4
–49.2
–48.7
–47.9
–47.0
–47.6
–48.7
–51.0
–53.1
–55.6
–57.0
–59.0
–61.3
–65.2
–70.6
–78.3
–87.0
–95.5
5
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Description RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6
Is it Rohs certified? conform to conform to incompatible incompatible incompatible conform to conform to incompatible incompatible
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics
package instruction SMALL OUTLINE, R-PDSO-G6 PLASTIC, SO-6 PLASTIC, SO-6 PLASTIC, SO-6 PLASTIC, SO-6 PLASTIC, SO-6 PLASTIC, SO-6 PLASTIC, SO-6 PLASTIC, SO-6
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 1.5 pF 1.5 pF 1.5 pF 1.5 pF 1.5 pF 1.5 pF 1.5 pF 1.5 pF 1.5 pF
Collector-emitter maximum voltage 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
JESD-609 code e6 e6 e0 e0 e0 e6 e6 e0 e0
Number of components 2 2 2 2 2 2 2 2 2
Number of terminals 6 6 6 6 6 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 260 260 NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES YES
Terminal surface TIN BISMUTH TIN BISMUTH TIN LEAD TIN LEAD TIN LEAD TIN BISMUTH TIN BISMUTH TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 10 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 10 10 NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 4500 MHz 4500 MHz 4500 MHz 4500 MHz 4500 MHz 4500 MHz 4500 MHz 4500 MHz 4500 MHz

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Shortcut:   E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

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