TS865C06R
(60V/20A)
[200509]
Low IR Schottky barrier diode
Outline drawings, mm
0.9
±0.3
10
+0.5
4.5
±0.2
1.32
Low IR
Low V
F
Center tap connection
1.5 Max
9.3
±0.5
Features
1.2
±0.2
5.08
0.8
—0.1
2.7
+0.2
0.4
+0.2
Applications
High frequency operation
DC-DC converters
AC adapter
1. Gate
2, 4. Drain
3. Source
Package : T-pack
Epoxy resin UL : V-0
Connection diagram
1
2
3
Maximum ratings and characteristics
Maximum ratings
Item
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Isolating voltage
Average output current
Non-repetitive surge current
non-repetitive reverse surge power dissipation
Symbol
V
RSM
V
RRM
Viso
I
o
I
FSM
PRM
T
j
T
stg
Conditions
tw=500ns, duty=1/40
Rating
60
60
Unit
V
V
V
A
A
W
°C
°C
Terminals-to-Case, AC.1min.
Square wave, duty=1/2
Tc=122°C
1500
20
145
660
+150
-40 to +150
Sine wave 10ms
tw=10μs, Tj=25°C
Operating junction temperature
Storage temperature
*
Out put current of center tap full wave connection
Electrical characteristics (at Ta=25°C Unless otherwise specified )
Item
Forward voltage **
Reverse current **
Thermal resistance
Symbol
V
F
I
R
Rth(j-c)
Conditions
I
F
=10A
V
R
=60V
Junction to case
Max.
0.74
175
1.75
Unit
V
μA
°C/W
**Rating per element
Mechanical characteristics
Mounting torque
Approximate mass
http://www.fujielectric.co.jp/fdt/scd/
Recommended torque
0.3 to 0.5
2
N
·
m
g
3.0
±0.3
(60V / 20A )
Characteristics
TS865C06R (20A)
Forward Characteristic (typ.)
10
10
o
Reverse Characteristic (typ.)
Tj=150 C
1
o
Tj=125 C
Tj=100 C
o
o
IF Forward Current (A)
IR Reverse Current (mA)
10
0
Tj=150 C
Tj=125 C
o
Tj=100 C
Tj=25 C
1
o
o
10
-1
Tj= 25 C
o
10
-2
10
-3
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
-4
0
10
20
30
40
50
60
70
80
VF Forward Voltage (V)
VR Reverse Voltage (V)
16
14
12
10
Forward Power Dissipation (max.)
3
Io
Reverse Power Dissipation (max.)
360 º
‚ vj
i
λ
PR Reverse Power Dissipation (W)
VR
2
‚ v e Forward Power Dissipation
‚
360 º
o
Square wave
λ
=60
o
Square wave
λ
=120
o
Sine wave
λ
=180
8 Square wave
λ
=180
o
DC
6
4
2
α
1
Per 1element
0
0
2
4
6
8
10
12
0
0
20
40
60
80
Io Average Output Current (A)
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
150
Junction Capacitance Characteristic (max.)
1000
140
Tc Case Temperature ( C)
130
DC
Sine wave
λ
=180
120
360 º
o
o
Junction Capacitance (pF)
o
100
Square wave
λ
=180
Square wave
λ
=120
o
110
λ
Io
100
VR=30V
Cj
Square wave
λ
=60
o
90
0
5
10
15
20
25
30
10
1
10
100
1000
Io Average Output Current (A)
λ
:Conduction angle of forward current for each rectifier element
VR
Io:Output current of center-tap full wave connection
4321
1
432
4321
4321
4321
4321
4321
4321
4321
4321
4321
4321
4321
4321
4321
4321
543210987654321
543210987654321
543210987654321
543210987654321
543210987654321
543210987654321
DC
α
=180
o
Reverse Voltage (V)
(60V / 20A )
TS865C06R (20A)
1000
Surge Capability (max.)
I FSM Peak Half - Wave Current (A)
100
10
1
10
100
Number of Cycles at 50Hz
Surge Current Ratings (max.)
1000
IFSM PeakHAlf-WaveCurrent (A)
100
10
1
10
100
1000
tTime (ms) Sinewave
10
1
Transient Thermal Impedance (max.)
(°C/W)
Rth(j-c):1.75°C/W
Transient Thermal Impedance
10
0
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec)
http://www.fujielectric.co.jp/fdt/scd/
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