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M5M4V4170RT-7S

Description
Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40
Categorystorage    storage   
File Size2MB,29 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

M5M4V4170RT-7S Overview

Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40

M5M4V4170RT-7S Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMitsubishi
Parts packaging codeTSOP2
package instructionTSOP2-R, TSOP40/44,.46,32
Contacts44
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G40
JESD-609 codee0
length18.41 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals40
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2-R
Encapsulate equivalent codeTSOP40/44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle1024
reverse pinoutYES
Maximum seat height1.2 mm
self refreshYES
Maximum standby current0.00007 A
Maximum slew rate0.085 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
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