MT16JTF51264AIY-1G0XX datasheet, PDF

MT16JTF51264AIY-1G0XX: DescriptionDDR DRAM Module, 512MX64, CMOS, LEAD FREE, MO-269R/CB, UDIMM-240; Categorystorage storage; File Size341KB，13 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT16JTF51264AIY-1G0XX Overview

DDR DRAM Module, 512MX64, CMOS, LEAD FREE, MO-269R/CB, UDIMM-240

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	DIMM
package instruction	DIMM,
Contacts	240
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N240
JESD-609 code	e4
length	133.35 mm
memory density	34359738368 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	240
word count	536870912 words
character code	512000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	30.5 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.575 V
Minimum supply voltage (Vsup)	1.425 V
Nominal supply voltage (Vsup)	1.5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal pitch	1 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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