K8C1115ETM-DE1E0 datasheet, PDF

K8C1115ETM-DE1E0: DescriptionFlash, 32MX16, 110ns, PBGA167, 10.50 X 14 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-167; Categorystorage storage; File Size2MB，68 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K8C1115ETM-DE1E0 Overview

Flash, 32MX16, 110ns, PBGA167, 10.50 X 14 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-167

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	LFBGA, BGA167,12X15,32
Contacts	167
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	110 ns
Other features	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup block	TOP
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B167
length	14 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of departments/size	4,511
Number of terminals	167
word count	33554432 words
character code	32000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA167,12X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Programming voltage	1.8 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.4 mm
Department size	16K,64K
Maximum standby current	0.00002 A
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	10.5 mm

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