Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA56, 8 X 10 MM, 1.40 MM HEIGHT, LFBGA-56
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Silicon Laboratories Inc |
| Parts packaging code | BGA |
| package instruction | LFBGA, BGA56,8X8,32 |
| Contacts | 56 |
| Reach Compliance Code | unknown |
| Maximum access time | 70 ns |
| Other features | SRAM IS ORGANISED AS 512K X 16 |
| JESD-30 code | R-PBGA-B56 |
| length | 10 mm |
| memory density | 16777216 bit |
| Memory IC Type | MEMORY CIRCUIT |
| memory width | 16 |
| Mixed memory types | FLASH+SRAM |
| Number of functions | 1 |
| Number of terminals | 56 |
| word count | 1048576 words |
| character code | 1000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -20 °C |
| organize | 1MX16 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | LFBGA |
| Encapsulate equivalent code | BGA56,8X8,32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, LOW PROFILE, FINE PITCH |
| power supply | 3 V |
| Certification status | Not Qualified |
| Maximum seat height | 1.4 mm |
| Maximum standby current | 0.00004 A |
| Maximum slew rate | 0.06 mA |
| Maximum supply voltage (Vsup) | 3.3 V |
| Minimum supply voltage (Vsup) | 2.7 V |
| Nominal supply voltage (Vsup) | 3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| width | 8 mm |
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