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CMXT2907ABK

Description
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6
CategoryDiscrete semiconductor    The transistor   
File Size3MB,2 Pages
ManufacturerCentral Semiconductor
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CMXT2907ABK Overview

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6

CMXT2907ABK Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionSUPERMINI-6
Contacts6
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)45 ns

CMXT2907ABK Related Products

CMXT2907ABK CMXT2907ATR
Description Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6 Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6
Is it Rohs certified? incompatible incompatible
Maker Central Semiconductor Central Semiconductor
package instruction SUPERMINI-6 SUPERMINI-6
Contacts 6 6
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.6 A 0.6 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 100 100
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e0 e0
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.35 W 0.35 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
Maximum off time (toff) 100 ns 100 ns
Maximum opening time (tons) 45 ns 45 ns

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