Rectifier Diode, 1 Phase, 1 Element, 3.3A, 600V V(RRM), Silicon,
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | SEMIKRON |
| package instruction | O-PALF-W2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | LEAKAGE CURRENT IS TYPICAL |
| application | FAST RECOVERY |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.25 V |
| JESD-30 code | O-PALF-W2 |
| JESD-609 code | e2 |
| Maximum non-repetitive peak forward current | 175 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -40 °C |
| Maximum output current | 3.3 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 600 V |
| Maximum reverse current | 5 µA |
| Maximum reverse recovery time | 0.08 µs |
| surface mount | NO |
| Terminal surface | Tin/Silver (Sn/Ag) |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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