EDI8465C35QB datasheet, PDF - EEWORLD Datasheet

EDI8465C35QB: DescriptionStandard SRAM, 64KX4, 35ns, CMOS, CDIP24,; Categorystorage storage; File Size55KB，2 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI8465C35QB Overview

Standard SRAM, 64KX4, 35ns, CMOS, CDIP24,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-CDIP-T24
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	24
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX4
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.01 A
Minimum standby current	4.5 V
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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