EDI44256C150QB datasheet, PDF - EEWORLD Datasheet

EDI44256C150QB: DescriptionFast Page DRAM, 256KX4, 150ns, CMOS, CDIP20,; Categorystorage storage; File Size1022KB，18 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI44256C150QB Overview

Fast Page DRAM, 256KX4, 150ns, CMOS, CDIP20,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
access mode	FAST PAGE
Maximum access time	150 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-CDIP-T20
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	FAST PAGE DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	20
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX4
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP20,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.0005 A
Maximum slew rate	0.055 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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