12 A, SILICON, RECTIFIER DIODE, DO-4
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Parts packaging code | DO-4 |
package instruction | O-MUPM-D1 |
Contacts | 1 |
Reach Compliance Code | _compli |
ECCN code | EAR99 |
Is Samacsys | N |
application | FAST RECOVERY |
Shell connection | CATHODE |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
JEDEC-95 code | DO-203AA |
JESD-30 code | O-MUPM-D1 |
JESD-609 code | e0 |
Maximum non-repetitive peak forward current | 175 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 1 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 20 A |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Qualified |
Guideline | MIL-19500/304 |
Maximum repetitive peak reverse voltage | 200 V |
Maximum reverse recovery time | 0.2 µs |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrie |
Terminal form | SOLDER LUG |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |