a
Ultralow Distortion, Wide
Bandwidth Voltage Feedback Op Amps
AD9631/AD9632
FUNCTIONAL BLOCK DIAGRAM
8-Pin Plastic Mini-DIP (N), Cerdip (Q),
and SO (R) Packages
FEATURES
Wide Bandwidth
AD9631, G = +1 AD9632, G = +2
Small Signal
320 MHz
250 MHz
Large Signal (4 V p-p) 175 MHz
180 MHz
Ultralow Distortion (SFDR), Low Noise
–113 dBc typ @ 1 MHz
–95 dBc typ @ 5 MHz
–72 dBc typ @ 20 MHz
+46 dBm 3rd Order Intercept @ 25 MHz
7.0 nV/√Hz Spectral Noise Density
High Speed
Slew Rate 1300 V/µs
Settling 16 ns to 0.01%, 2 V Step
±3
V to
±5
V Supply Operation
17 mA Supply Current
APPLICATIONS
ADC Input Driver
Differential Amplifiers
IF/RF Amplifiers
Pulse Amplifiers
Professional Video
DAC Current to Voltage
Baseband and Video Communications
Pin Diode Receivers
Active Filters/Integrators/Log Amps
PRODUCT DESCRIPTION
HARMONIC DISTORTION – dBc
NC
–INPUT
+INPUT
–V
S
1
2
3
4
8
7
6
NC
+V
S
OUTPUT
NC
AD9631/32
(Top View)
NC = NO CONNECT
5
These characteristics position the AD9631/AD9632 ideally for
driving flash as well as high resolution ADCs. Additionally, the
balanced high impedance inputs of the voltage feedback archi-
tecture allow maximum flexibility when designing active filters.
The AD9631 is offered in industrial (–40°C to +85°C) and mili-
tary (–55°C to +125°C) temperature ranges and the AD9632 in
industrial. Industrial versions are available in plastic DIP and
SOIC; MIL versions are packaged in cerdip.
–30
V
O
= 2V p–p
V
S
=
±5V
R
L
= 500Ω
–50
The AD9631 and AD9632 are very high speed and wide band-
width amplifiers. They are an improved performance alternative
to the AD9621 and AD9622. The AD9631 is unity gain stable.
The AD9632 is stable at gains of two or greater. Utilizing a
voltage feedback architecture, the AD9631/AD9632’s excep-
tional settling time, bandwidth, and low distortion meet the
requirements of many applications which previously depended
on current feedback amplifiers. Its classical op amp structure
works much more predictably in many designs.
A proprietary design architecture has produced an amplifier that
combines many of the best characteristics of both current feed-
back and voltage feedback amplifiers. The AD9631 and
AD9632 exhibit exceptionally fast and accurate pulse response
(16 ns to 0.01%) as well as extremely wide small signal and
large signal bandwidth and ultralow distortion. The AD9631
achieves –72 dBc at 20 MHz and 320 MHz small signal and
175 MHz large signal bandwidths.
–70
2ND HARMONIC
–90
3RD HARMONIC
–110
–130
10k
100k
1M
FREQUENCY – Hz
10M
100M
Figure 1. AD9631 Harmonic Distortion vs. Frequency,
G = +1
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
AD9631/AD9632–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(±V =
±5
V; R
S
LOAD
= 100
Ω;
A
V
= 1 (AD9631); A
V
= 2 (AD9632), unless otherwise noted)
AD9631A
Min Typ Max
AD9632A
Min Typ Max
Units
Parameter
DYNAMIC PERFORMANCE
Bandwidth (–3 dB)
Small Signal
Large Signal
1
Bandwidth for 0.1 dB Flatness
Slew Rate, Average +/–
Rise/Fall Time
Settling Time
To 0.1%
To 0.01%
HARMONIC/NOISE PERFORMANCE
2nd Harmonic Distortion
3rd Harmonic Distortion
3rd Order Intercept
Noise Figure
Input Voltage Noise
Input Current Noise
Average Equivalent Integrated
Input Noise Voltage
Differential Gain Error (3.58 MHz)
Differential Phase Error (3.58 MHz)
Phase Nonlinearity
DC PERFORMANCE
2,
R
L
= 150
Ω
Input Offset Voltage
3
Conditions
220
V
OUT
≤
0.4 V p-p
V
OUT
= 4 V p-p
150
V
OUT
= 300 mV p-p
9631, R
F
= 140
Ω;
9632, R
F
= 425
Ω
1000
V
OUT
= 4 V Step
V
OUT
= 0.5 V Step
V
OUT
= 4 V Step
V
OUT
= 2 V Step
V
OUT
= 2 V Step
2 V p-p; 20 MHz, R
L
= 100
Ω
R
L
= 500
Ω
2 V p-p; 20 MHz, R
L
= 100
Ω
R
L
= 500
Ω
25 MHz
R
S
= 50
Ω
1 MHz to 200 MHz
1 MHz to 200 MHz
0.1 MHz to 200 MHz
R
L
= 150
Ω
R
L
= 150
Ω
dc to 100 MHz
320
175
130
1300
1.2
2.5
11
16
–64
–72
–76
–81
+46
18
7.0
2.5
100
0.03
0.02
1.1
3
–57
–65
–69
–74
180
155
250
180
MHz
MHz
MHz
V/µs
ns
ns
ns
ns
–47
–65
–67
–74
dBc
dBc
dBc
dBc
dBm
dB
nV√Hz
pA√Hz
µV
rms
%
Degree
Degree
mV
mV
µV/°C
µA
µA
µA
µA
dB
dB
dB
kΩ
pF
V
V
mA
Ω
mA
V
mA
mA
dB
130
1200 1500
1.4
2.1
11
16
–54
–72
–74
–81
+41
14
4.3
2.0
0.06
0.04
60
0.02 0.04
0.02 0.04
1.1
2
5
8
T
MIN
–T
MAX
Offset Voltage Drift
Input Bias Current
T
MIN
–T
MAX
Input Offset Current
Common-Mode Rejection Ratio
Open-Loop Gain
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Common-Mode Voltage Range
OUTPUT CHARACTERISTICS
Output Voltage Range, R
L
= 150
Ω
Output Current
Output Resistance
Short Circuit Current
POWER SUPPLY
Operating Range
Quiescent Current
Power Supply Rejection Ratio
T
MIN
–T
MAX
T
MIN
–T
MAX
T
MIN
–T
MAX
V
CM
=
±
2.5 V
V
OUT
=
±
2.5 V
T
MIN
–T
MAX
70
46
40
±
10
2
0.1
90
52
10
13
7
10
3
5
70
46
40
±
10
2
7
10
0.1 3
5
90
52
500
1.2
±
3.4
±
3.2
±
3.9
70
0.3
240
±
3.0
±
5.0
±
6.0
17
18
21
50
60
500
1.2
±
3.4
±
3.2
±
3.9
70
0.3
240
±
3.0
±
5.0
±
6.0
16 17
20
56
66
NOTES
1
See Max Ratings and Theory of Operation sections of data sheet.
2
Measured at A
V
= 50.
3
Measured with respect to the inverting input.
Specifications subject to change without notice.
–2–
REV. A
AD9631/AD9632
ABSOLUTE MAXIMUM RATINGS
1
MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Voltage Swing
×
Bandwidth Product . . . . . . . . . . 550 V
×
MHz
Internal Power Dissipation
2
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±
1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Pin Plastic Package:
θ
JA
= 90°C/Watt
8-Pin SOIC Package:
θ
JA
= 140°C/Watt
1
The maximum power that can be safely dissipated by these de-
vices is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu-
lated devices is determined by the glass transition temperature
of the plastic, approximately +150°C. Exceeding this limit tem-
porarily may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceed-
ing a junction temperature of +175°C for an extended period can
result in device failure.
While the AD9631 and AD9632 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (+150°C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to ob-
serve the maximum power derating curves.
2.0
MAXIMUM POWER DISSIPATION – Watts
8-PIN MINI-DIP PACKAGE
T
J
= +150
°
C
1.5
METALIZATION PHOTO
Dimensions shown in inches and (mm).
Connect Substrate to –V
S
.
–IN
2
+V
S
7
1.0
8-PIN SOIC PACKAGE
0.5
0.046
(1.17)
0
–50 –40 –30 –20 –10
0 10 20 30 40 50 60
AMBIENT TEMPERATURE –
°
C
6
OUT
70
80 90
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
3
+IN
4
–V
S
0.050 (1.27)
AD9631
–IN
2
+V
S
7
Model
AD9631AN
AD9631AR
AD9631(SMD)
AD9631-EB
Temperature
Range
Package
Package
Description Option*
N-8
R-8
Q-8
0.046
(1.17)
6
OUT
AD9632AN
AD9632AR
AD9632-EB
–40C to +85°C
Plastic DIP
–40°C to +85°C SOIC
–55°C to +125°C Cerdip
Evaluation
Board
–40°C to +85°C Plastic DIP
–40°C to +85°C SOIC
Evaluation
Board
N-8
R-8
*N = Plastic DIP; Q = Cerdip; R= SOIC (Small Outline Integrated Circuit).
3
+IN
4
–V
S
0.050 (1.27)
AD9632
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although these devices feature proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. A
–3–
AD9631/AD9632
AD9631–Typical Characteristics
R
F
+V
S
10µF
0.1µF
PULSE
GENERATOR
T
R
/T
F
= 350ps
V
IN
R
T
49.9Ω
–V
S
130Ω
2
7
V
IN
PULSE
GENERATOR
T
R
/T
F
= 350ps
130Ω
2
R
T
49.9Ω
3
R
L
= 100Ω
10µF
100Ω
6
0.1µF
4
V
OUT
7
+V
S
R
F
10µF
0.1µF
AD9631
3
AD9631
4
6
0.1µF
V
OUT
R
L
= 100Ω
10µF
–V
S
Figure 3. Noninverting Configuration, G = +1
Figure 6. Inverting Configuration, G = –1
Figure 4. Large Signal Transient Response; V
O
= 4 V p-p,
G = +1, R
F
= 250
Ω
Figure 7. Large Signal Transient Response; V
O
= 4 V p-p,
G = –1, R
F
= R
IN
= 267
Ω
Figure 5. Small Signal Transient Response;
V
O
= 400 mV p-p, G = +1, R
F
= 140
Ω
Figure 8. Small Signal Transient Response;
V
O
= 400 mV p-p, G = –1, R
F
= R
IN
= 267
Ω
REV. A
–4–
AD9631/AD9632
AD9632–Typical Characteristics
R
F
PULSE
GENERATOR
T
R
/T
F
= 350ps
R
IN
2
130Ω
R
T
49.9Ω
–V
S
7
+V
S
10µF
0.1µF
R
F
+V
S
10µF
0.1µF
2
R
T
49.9Ω
100Ω
7
PULSE
GENERATOR
T
R
/T
F
= 350ps
V
IN
130Ω
AD9632
V
IN
3
4
6
0.1µF
V
OUT
R
L
= 100Ω
AD9632
3
4
6
0.1µF
V
OUT
R
L
= 100Ω
10µF
10µF
–V
S
Figure 9. Noninverting Configuration, G = +2
Figure 12. Inverting Configuration, G= –1
Figure 10. Large Signal Transient Response; V
O
= 4 V p-p,
G = +2, R
F
= R
IN
= 422
Ω
Figure 13. Large Signal Transient Response; V
O
= 4 V p-p,
G = –1, R
F
= R
IN
= 422
Ω
, R
T
= 56.2
Ω
Figure 11. Small Signal Transient Response;
V
O
= 400 mV p-p, G = +2, R
F
= R
IN
= 274
Ω
Figure 14. Small Signal Transient Response;
V
O
= 400 mV p-p, G = –1, R
F
= R
IN
= 267
Ω
,
R
T
= 61.9
Ω
REV. A
–5–
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