GF4800
N-Channel Enhancement-Mode MOSFET
CH
EN ET
T
REN
F
V
DS
30V
R
DS(ON)
18.5
m
Ω
I
D
9A
®
G
5
SO-8
0.197 (5.00)
0.189 (4.80)
uct
rod
wP
Ne
0.05 (1.27)
0.04 (1.02)
0.245 (6.22)
Min.
0.009 (0.23)
0.007 (0.18)
8
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
1
4
Dimensions in inches
and (millimeters)
0.019 (0.48)
x 45
°
0.010 (0.25)
0.165 (4.19)
0.155 (3.94)
0.050 (1.27)
0.020 (0.51)
0.013 (0.33)
0.069 (1.75)
0.053 (1.35)
0.009 (0.23)
0.004 (0.10)
0.035 (0.889)
0.025 (0.635)
0
°
– 8
°
0.050(1.27)
0.016 (0.41)
0.050 typ.
(1.27)
Mounting Pad Layout
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position:
Any
Weight:
0.5g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
• Reduced Gate Charge
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
J
= 150°C
(1)
Pulsed Drain Current
Maximum Power Dissipation
(1)
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
θJA
A
= 25°C unless otherwise noted)
Limit
30
Unit
V
±
25
9
7
40
2.5
1.6
–55 to 150
50
A
W
°C
°C/W
7/10/01
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
(1)
Thermal Resistance
Notes:
(1) Surface mounted on FR4 board, t
≤
10 sec.
GF4800
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
(T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
(1)
Drain-Source On-State Resistance
(1)
Forward Transconductance
(1)
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage
(1)
Continuous Source Current (Diode Conduction)
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ± 20V, V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
V
DS
≥
5V, V
GS
= 10V
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
V
DS
= 15V, I
D
= 9A
30
0.8
–
–
–
40
–
–
–
–
–
–
–
–
–
15.5
23.5
26
–
3.0
V
V
nA
µA
A
mΩ
S
±
100
1
5
–
18.5
33
–
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
= 15V, V
GS
= 5V,I
D
= 9A
V
DS
= 15V, I
D
= 9A
V
GS
= 10V
–
–
–
–
–
–
–
–
–
–
–
10.5
20.5
3.5
3.1
9
5
31
5
1160
195
90
13
28
–
–
15
10
45
10
–
–
–
pF
ns
nC
V
DD
= 15V, I
D
= 1A
V
GEN
= 10V, R
G
= 6Ω
R
L
= 15Ω
V
DS
= 15V, V
GS
= 0V
f = 1.0MH
Z
V
SD
I
S
I
S
= 2.3A, V
GS
= 0V
–
–
–
0.75
–
1.2
2.3
V
A
Notes:
(1) Pulse test; pulse width
≤
300
µs,
duty cycle
≤
2%
V
DD
t
on
t
off
t
r
90%
Switching
Test Circuit
V
GEN
R
G
V
IN
D
R
D
V
OUT
Switching
Waveforms
t
d(on)
t
d(off)
t
f
90 %
10%
INVERTED
90%
Output, V
OUT
DUT
10%
G
50%
50%
S
Input, V
IN
10%
PULSE WIDTH
GF4800
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
40
A
= 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
I
D
-- Drain-to-Source Current (A)
V
GS
=
10V
35
6.0V
30
5.0V
25
20
3.5V
15
10
5
0
0
1
2
3
4
3.0V
40
4.5V
35
4.0V
Fig. 2 – Transfer Characteristics
V
DS
= 10V
I
D
-- Drain Current (A)
30
25
20
15
T
J
= 125°C
10
25°C
5
0
1
2
3
4
5
6
--
55°C
V
DS
-- Drain-to-Source Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
vs. Temperature
V
GS(th)
-- Gate-to-Source Threshold Voltage
2.2
I
D
= 250µA
0.04
0.035
0.03
0.025
0.02
0.015
2.0
1.8
1.6
1.4
1.2
1.2
0.8
Fig. 4 – On-Resistance
vs. Drain Current
R
DS(ON)
-- On-Resistance (Ω)
V
GS
= 4.5V
10V
0.01
0.005
0
--
50
--
25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
T
J
-- Junction Temperature (°C)
I
D
-- Drain Current (A)
Fig. 5 – On-Resistance
vs. Junction Temperature
R
DS(ON)
-- On-Resistance (Normalized)
1.6
V
GS
= 10V
I
D
= 9A
1.4
1.2
1
0.8
0.6
--
50
--
25
0
25
50
75
100
125
150
T
J
-- Junction Temperature (°C)
GF4800
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
0.07
10
Fig. 7 – Gate Charge
V
GS
-- Gate-to-Source Voltage (V)
V
DS
= 15V
I
D
= 9A
8
I
D
= 9A
R
DS(ON)
-- On-Resistance (Ω)
0.06
0.05
0.04
0.03
0.02
25°C
0.01
0
2
4
6
8
10
T
J
= 125°C
6
4
2
0
0
4
8
12
16
20
24
V
GS
-- Gate-to-Source Voltage (V)
Q
g
-- Gate Charge (nC)
Fig. 8 – Capacitance
1500
f = 1MH
Z
V
GS
= 0V
1200
100
Fig. 9 – Source-Drain Diode
Forward Voltage
V
GS
= 0V
I
S
-- Source Current (A)
C -- Capacitance (pF)
C
iss
10
900
1
T
J
= 125°C
25°C
600
300
C
oss
C
rss
0.1
--55°C
0
0.01
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS
-- Drain-to-Source Voltage (V)
V
SD
-- Source-to-Drain Voltage (V)
GF4800
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage vs.
Junction Temperature
42
I
D
= 250µA
41
Fig. 11 – Transient Thermal
Impedance
BV
DSS
-- Drain-to-Source
Breakdown Voltage (V)
40
39
38
37
36
--50
--25
0
25
50
75
100
125
150
T
J
-- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
70
60
50
40
30
20
10
0
0.01
0.1
1
10
100
0.01
100
Fig. 13 – Maximum Safe Operating Area
10
I
D
-- Drain Current (A)
10
10
10
0m
s
1m
s
ms
0
µ
s
R
DS(ON)
Limit
1
1s
10s
0.1
V
GS
= 10V
Single Pulse
on 1-in
2
2oz Cu.
T
A
= 25°C
0.1
1
DC
10
100
V
DS
-- Drain-Source Voltage (V)
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