BGA 310
Silicon Bipolar MMIC-Amplifier
Cascadable 50
-gain block
3
4
2
1
RF OUT/Bias
9 dB typical gain at 1.0 GHz
9 dBm typical
P
-1dB
at 1.0 GHz
3 dB-bandwidth: DC to 2.4 GHz
Circuit Diagram
2, 4
EHA07312
Type
BGA 310
Marking
BLs
1 RFout/bias
Maximum Ratings
Parameter
Device current
RF input power
Junction temperature
Ambient temperature
Storage temperature
Total power dissipation,
T
S
99 °C
1)
Symbol
I
D
P
tot
P
RFin
T
j
T
A
T
stg
Value
60
250
10
150
-65 ... 150
-65 ... 150
Unit
mA
mW
dBm
°C
Thermal Resistance
Junction - soldering point
R
thJS
1
T
is measured on the collector lead at the soldering point to the pcb
S
1
VPS05178
RF IN
3
GND
Pin Configuration
2 GND
3 RF input 4 GND
Package
SOT-143
205
K/W
1
Oct-26-1999
BGA 310
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter
Symbol
Values
min.
Insertion power gain
f
= 0.1 GHz
f
= 1 GHz
f
= 1.8 GHz
f
= 0.1 GHz to 0.6 GHz
Noise figure
f
= 0.1 GHz
f
= 1 GHz
f
= 2 GHz
1dB compression point
f
= 1 GHz
Return loss input
f
= 0.1 GHz to 2 GHz
Return loss output
f = 0.1 GHz to 3 GHz
Typical biasing configuration
RL
out
-
15
-
RL
in
-
20
-
P
-1dB
Insertion point gain flatness
=
|S
21
|
2
typ.
max.
AC characteristics
(V
D
= 4.7 V,
Z
o
= 50
)
|S
21
|
2
-
-
-
-
10
9
8
+-0.5
-
-
-
-
Unit
NF
-
-
-
-
6
6.5
7
9
-
-
-
-
2
dB
dB
dB
dBm
dB
R
Bias
=
V
CC
-
V
D
/
I
D
V
D
= 4.7V
Oct-26-1999
BGA 310
S-Parameters at
T
A
= 25 °C
f
GHz
S
11
MAG
ANG
MAG
S
21
ANG
MAG
S
12
ANG
MAG
S
22
ANG
V
D
= 4.7 V,
Z
o
= 50
0.01
0.051
176.4
0.1
0.053
168.1
0.3
0.053
141.9
0.5
0.058
123.9
0.8
0.054
98.2
1
0.049
86.1
1.8
0.053
-164.9
2.4
0.161
-177.7
3
0.257
153.9
Insertion power gain
|S
21
|
2
=
f
(
f
)
V
D
= 4.7 V,
I
D
= 42 mA
25
dB
|S
21
|
2
15
NF
10
5
0
-1
10
3.22
3.23
3.22
3.2
3.17
3.12
2.79
2.41
2.03
179.3
174.9
164.6
154.2
138.7
128.4
88
60.8
38.2
0.149
0.149
0.15
0.152
0.157
0.162
0.188
0.208
0.225
0.2
1.2
3.4
5.4
8.1
9.7
12
10.6
8.2
0.159
0.158
0.157
0.155
0.153
0.153
0.16
0.168
0.178
-0.5
-6.1
-19
-31.7
-51.3
-64.3
-106.6
-123.7
-133.1
Noise figure
NF
=
f
(
f
)
V
D
= 4.7 V,
I
D
= 42 mA
10
dB
6
4
2
10
0
GHz
10
1
0
-1
10
10
0
GHz
10
1
f
f
3
Oct-26-1999
BGA 310
Output power 1-dB-gain compression
P
-1dB
=
f
(
f
)
V
D
= 4.7 V,
I
D
= 42 mA
25
dBm
P
-1dB
15
10
5
0
-1
10
10
0
GHz
10
1
f
4
Oct-26-1999
京公网安备 11010802033920号
EEWORLD
