GBJ4M datasheet, PDF - EEWORLD Datasheet

GBJ4M: DescriptionBridge Rectifier Diode, 4A, 1000V V(RRM),; CategoryDiscrete semiconductor diode; File Size766KB，2 Pages; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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GBJ4M Overview

Bridge Rectifier Diode, 4A, 1000V V(RRM),

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Good-Ark
Reach Compliance Code	compliant
Minimum breakdown voltage	1000 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PSFM-T4
Maximum non-repetitive peak forward current	150 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	2.4 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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