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Datasheet> All Categories > Discrete semiconductor> The transistor> SFP9530
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SFP9530

Description
10.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size914KB，8 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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SFP9530 Overview

10.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

SFP9530 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-220AB
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)368 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)10.5 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity levelNOT APPLICABLE
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)42 A
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

SFP9530 Preview

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Advanced Power MOSFET
FEATURES
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
o
n
175 C Opereting Temperature
n
Extended Safe Operating Area
n
Lower Leakage Current : -10
µA
(Max.) @ V
DS
= -100V
n
Low R
DS(ON)
: 0.225
Ω
(Typ.)
SFP9530
BV
DSS
= -100 V
R
DS(on)
= 0.3
Ω
I
D
= -10.5 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
o
2
O
1
O
1
O
3
O
o
o
Value
-100
-10.5
-7.5
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ C
o
-42
±30
368
-10.5
6.6
-6.5
66
0.44
- 55 to +175
o
C
300
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
2.27
--
62.5
o
Units
C/W
Rev. C
SFP9530
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Symbol
BV
DSS
∆BV/∆T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
-100
--
-2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.1
--
--
--
--
--
--
5.5
160
60
13
22
45
25
30
5.4
12.2
--
--
-4.0
-100
100
-10
-100
0.3
--
240
90
35
55
100
60
38
--
--
nC
ns
µA
Ω
S
pF
V
o
P-CHANNEL
POWER MOSFET
Test Condition
V
GS
=0V,I
D
=-250µA
See Fig 7
V
DS
=-5V,I
D
=-250µA
V
GS
=-20V
V
GS
=20V
V
DS
=-100V
V
DS
=-80V,T
C
=150 C
V
GS
=-10V,I
D
=-5.3A
V
DS
=-40V,I
D
=-5.3A
4
O
4
O
o
V/ C I
D
=-250µA
V
nA
800 1035
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
V
DD
=-50V,I
D
=-10.5A,
R
G
=12
Ω
See Fig 13
V
DS
=-80V,V
GS
=-10V,
I
D
=-10.5A
See Fig 6 & Fig 12
4
5
OO
4
5
OO
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1
O
4
O
Min. Typ. Max. Units
--
--
--
--
--
--
--
--
120
0.53
-10.5
-42
-4.0
--
--
A
V
ns
µC
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25 C,I
S
=-10.5A,V
GS
=0V
T
J
=25 C,I
F
=-10.5A
di
F
/dt=100A/µs
4
O
o
o
Notes ;
1
O
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
2
L=5.0mH, I =-10.5A, V =-25V, R =27Ω
*
, Starting T =25
o
C
O
AS
DD
G
J
3
_
_
_
O
I
SD
<
-10.5A, di/dt
<
400A/µs, V
DD
<
BV
DSS
, Starting T
J
=25
o
C
4
_
O
Pulse Test : Pulse Width = 250µs, Duty Cycle
<
2%
5
O
Essentially Independent of Operating Temperature
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V
GS
Top :
-1 V
5
-1 V
0
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
SFP9530
Fig 2. Transfer Characteristics
-I
D
, Drain Current [A]
-I
D
, Drain Current [A]
1
1
0
1
1
0
1 5
o
C
7
1
0
0
2
o
C
5
@Nts:
oe
1 V =0V
.
GS
2 V =-0V
.
DS
4
3 2 0
µ
s P l e T s
. 5
us et
6
8
1
0
1
0
0
@Nts:
oe
1 2 0
µ
s P l e T s
. 5
us et
2 T = 2
o
C
.
C
5
1
-1 -1
0
1
0
1
0
0
1
1
0
- 5
o
C
5
1
-1
0
2
4
-V
DS
, Drain-Source Voltage [V]
-V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
10
.
Fig 4. Source-Drain Diode Forward Voltage
-I
DR
, Reverse Drain Current [A]
R
DS(on)
, [
Ω
]
Drain-Source On-Resistance
08
.
1
1
0
06
.
V =-0V
1
GS
04
.
1
0
0
1 5
o
C
7
2
o
C
5
@Nts:
oe
1 V =0V
.
GS
us et
2 2 0
µ
s P l e T s
. 5
15
.
20
.
25
.
30
.
35
.
40
.
45
.
50
.
02
.
V =-0V
2
GS
00
.
0
7
1
4
2
1
2
8
@ N t : T = 2
o
C
oe
J
5
3
5
4
2
1
-1
0
05
.
10
.
-I
D
, Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
10
50
C =C +C (C =sotd)
iss gs gd
ds
h r e
C =C +C
oss ds gd
C =C
rss gd
Fig 6. Gate Charge vs. Gate-Source Voltage
1
0
Capacitance [pF]
C
iss
10
00
C
oss
50
0
C
rss
@Nts:
oe
1 V =0V
.
GS
2 f=1Mz
.
H
-V
GS
, Gate-Source Voltage [V]
V =-0V
2
DS
V =-0V
5
DS
V =-0V
8
DS
5
@Nts:I =1. A
oe
D
-05
0
0
5
1
0
1
5
2
0
2
5
3
0
3
5
0
0
1
0
1
1
0
-V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
SFP9530
Fig 7. Breakdown Voltage vs. Temperature
12
.
25
.
P-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
20
.
11
.
15
.
10
.
10
.
@Nts:
oe
1 V =-0V
.
GS
1
2 I =-. A
.
D
53
-0
5
-5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
15
7
20
0
09
.
@Nts:
oe
1 V =0V
.
GS
2 I = - 5
µ
A
.
D
20
-0
5
-5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
15
7
20
0
05
.
08
.
-5
7
00
.
-5
7
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Fig 9. Max. Safe Operating Area
-I
D
, Drain Current [A]
1
2
0
Oeaini Ti Ae
prto n hs ra
i L m t d b R
DS(on)
s iie y
01m
. s
1
1
0
D
C
1
0
0
@Nts:
oe
1 T = 2
o
C
.
C
5
2 T
.
J
3 Snl Ple
. ige us
= 1 5
o
C
7
1m
s
1 m
0 s
Fig 10. Max. Drain Current vs. Case Temperature
1
2
-I
D
, Drain Current [A]
1
2
0
1
0
8
6
4
2
1
-1 0
0
1
0
1
1
0
0
2
5
5
0
7
5
10
0
15
2
o
10
5
15
7
-V
DS
, Drain-Source Voltage [V]
T
c
, Case Temperature [ C]
Fig 11. Thermal Response
Thermal Response
10
0
D=0.5
0.2
0.1
0.05
@ Notes :
1. Z
θ
J C
(t)=2.27
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
C
=P
D M
*Z
θ
J C
(t)
P
.
DM
t
1.
t
2.
Z (t) ,
10
- 1
0.02
0.01
single pulse
θ
JC
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
t
1
, Square Wave Pulse Duration
[sec]
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