IRFS9243 datasheet, PDF - EEWORLD Datasheet

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IRFS9243: DescriptionPower Field-Effect Transistor, 6.2A I(D), 150V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size14KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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IRFS9243 Overview

Power Field-Effect Transistor, 6.2A I(D), 150V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

IRFS9243 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	TO-3PF
package instruction	FLANGE MOUNT, R-PSFM-G3
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (ID)	6.2 A
Maximum drain-source on-resistance	0.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON

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Parts packaging code	TO-3PF	TO-3PF	TO-3PF	TO-3PF	TO-3PF	TO-3PF	TO-3PF	TO-3PF	TO-3PF	TO-3PF
package instruction	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-G3
Contacts	2	2	2	2	2	2	2	2	2	2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	150 V	200 V	150 V	60 V	100 V	100 V	60 V	200 V	150 V	200 V
Maximum drain current (ID)	6.2 A	4.5 A	4.5 A	6.9 A	10.4 A	8.3 A	8.3 A	3.8 A	3.8 A	6.2 A
Maximum drain-source on-resistance	0.7 Ω	0.8 Ω	0.8 Ω	0.4 Ω	0.3 Ω	0.3 Ω	0.3 Ω	1.2 Ω	1.2 Ω	0.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-G3	R-PSFM-G3	R-PSFM-G3	R-PSFM-G3	R-PSFM-G3	R-PSFM-G3	R-PSFM-G3	R-PSFM-G3	R-PSFM-G3	R-PSFM-G3
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	SAMSUNG	-	-	-	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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