Power Field-Effect Transistor, 8.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Parameter Name | Attribute value |
Maker | SAMSUNG |
Parts packaging code | TO-3PF |
package instruction | FLANGE MOUNT, R-PSFM-G3 |
Contacts | 2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 8.3 A |
Maximum drain-source on-resistance | 0.3 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSFM-G3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | P-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | SINGLE |
Transistor component materials | SILICON |
IRFS9130 | IRFS9230 | IRFS9231 | IRFS9133 | IRFS9142 | IRFS9243 | IRFS9131 | IRFS9232 | IRFS9233 | IRFS9242 | |
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Description | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 4.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 4.5A I(D), 150V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 6.9A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 10.4A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 6.2A I(D), 150V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 8.3A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 3.8A I(D), 150V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 6.2A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN |
Parts packaging code | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF |
package instruction | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 |
Contacts | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum drain-source breakdown voltage | 100 V | 200 V | 150 V | 60 V | 100 V | 150 V | 60 V | 200 V | 150 V | 200 V |
Maximum drain current (ID) | 8.3 A | 4.5 A | 4.5 A | 6.9 A | 10.4 A | 6.2 A | 8.3 A | 3.8 A | 3.8 A | 6.2 A |
Maximum drain-source on-resistance | 0.3 Ω | 0.8 Ω | 0.8 Ω | 0.4 Ω | 0.3 Ω | 0.7 Ω | 0.3 Ω | 1.2 Ω | 1.2 Ω | 0.7 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Maker | SAMSUNG | - | - | - | - | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |