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IRFS9130

Description
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size14KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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IRFS9130 Overview

Power Field-Effect Transistor, 8.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

IRFS9130 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeTO-3PF
package instructionFLANGE MOUNT, R-PSFM-G3
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)8.3 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON

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Parts packaging code TO-3PF TO-3PF TO-3PF TO-3PF TO-3PF TO-3PF TO-3PF TO-3PF TO-3PF TO-3PF
package instruction FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3 FLANGE MOUNT, R-PSFM-G3
Contacts 2 2 2 2 2 2 2 2 2 2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 100 V 200 V 150 V 60 V 100 V 150 V 60 V 200 V 150 V 200 V
Maximum drain current (ID) 8.3 A 4.5 A 4.5 A 6.9 A 10.4 A 6.2 A 8.3 A 3.8 A 3.8 A 6.2 A
Maximum drain-source on-resistance 0.3 Ω 0.8 Ω 0.8 Ω 0.4 Ω 0.3 Ω 0.7 Ω 0.3 Ω 1.2 Ω 1.2 Ω 0.7 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-G3 R-PSFM-G3 R-PSFM-G3 R-PSFM-G3 R-PSFM-G3 R-PSFM-G3 R-PSFM-G3 R-PSFM-G3 R-PSFM-G3 R-PSFM-G3
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker SAMSUNG - - - - SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG
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