IRFY9130MEB datasheet, PDF - EEWORLD Datasheet

IRFY9130MEB: DescriptionPower Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,; CategoryDiscrete semiconductor The transistor; File Size1MB，33 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRFY9130MEB Overview

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	9.3 A
Maximum drain-source on-resistance	0.36 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	37 A
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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