SBA-4086 datasheet, PDF - EEWORLD Datasheet

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SBA-4086: DescriptionWide Band Low Power Amplifier, 0MHz Min, 5000MHz Max, 1 Func, GAAS, SOT-89, 3 PIN; CategoryWireless rf/communication Radio frequency and microwave; File Size600KB，6 Pages; ManufacturerQorvo; Websitehttps://www.qorvo.com

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SBA-4086 Overview

Wide Band Low Power Amplifier, 0MHz Min, 5000MHz Max, 1 Func, GAAS, SOT-89, 3 PIN

SBA-4086 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Qorvo
package instruction	SL,4GW-LD,.085CIR
Reach Compliance Code	unknown
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	12.7 dB
Maximum input power (CW)	17 dBm
JESD-609 code	e0
Installation features	SURFACE MOUNT
Number of functions	1
Number of terminals	4
Maximum operating frequency	5000 MHz
Minimum operating frequency
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Encapsulate equivalent code	SL,4GW-LD,.085CIR
power supply	5 V
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum slew rate	88 mA
surface mount	YES
technology	GAAS
Terminal surface	Tin/Lead (Sn/Pb)

SBA-4086 Preview

SBA4086Z

DCto5GHz, CASCADABLE InGaP/GaAs HBT

MMIC AMPLIFIER

Package: SOT-86

Product Description

RFMD’s SBA4086Z is a high performance InGaP/GaAs Heterojunction

Bipolar Transistor MMIC Amplifier. A Darlington configuration designed

with InGaP process technology provides broadband performance up to

5GHz with excellent thermal performance. The heterojunction increases

breakdown voltage and minimizes leakage current between junctions.

Cancellation of emitter junction non-linearities results in higher suppres-

sion of intermodulation products. Only a single positive supply voltage, DC-

blocking capacitors, a bias resistor, and an optional RF choke are required

Optimum Technology

for operation.

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

LDMOS

Features



IP3=33.5dBm at 1950MHz

OUT

=12.3dBm at -45dBc

ACP IS-95 1950MHz

Robust 1000V ESD, Class 1C

Operates From Single Supply

Patented Thermal Design

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

Applications



Gain and Return Loss vs Frequency

-5

-10

-15

-20

-25

-30

-35

-40

Frequency (GHz)



S21



s22

IF Amplifier

Wireless Data, Satellite

Terminals

s11

Parameter

Small Signal Gain

Min.

13.3

12.7

Specification

Typ.

Max.

Unit

Condition

14.8

16.3

850MHz

14.2

15.7

1950MHz

Output Power at 1dB Compression

19.1

dBm

850MHz

17.5

19.0

dBm

1950MHz

Output Third Order Intercept Point

36.5

dBm

850MHz

31.5

33.5

dBm

1950MHz

Output Power

12.3

dBm

1950MHz, -45dBc ACP IS-95 9 Forward Channels

Bandwidth

5000

MHz

Return Loss>10dB

Input Return Loss

14.0

21.0

1950MHz

Output Return Loss

14.0

20.5

1950MHz

Noise Figure

4.8

5.8

1950MHz

Device Operating Voltage

4.6

5.0

5.4

Device Operating Current

Thermal Resistance (junction to lead)

102

°C/W

Test Conditions: V

=8V, I

=80mA Typ., OIP

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=39, T

=25°C, Z

=50

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS110708

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SBA4086Z

Absolute Maximum Ratings

Parameter

Device Current (I

)

Device Voltage (V

)

RF Input Power

Junction Temp (T

)

Operating Temp Range (T

)

Storage Temp

Operating Dissipated Power

Rating

130

+17

+150

-40 to +85

+150

0.65

Unit

dBm

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free

per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric

materials and red phosphorus as a flame retardant, and <2% antimony in

solder.

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

<(T

-T

)/R

, j-l and T

LEAD

Typical Performance at Key Operating Frequencies

Parameter

Small Signal Gain

Output Third Order Intercept

Point

Output Power at 1dB

Compression

Input Return Loss

Output Return Loss

Reverse Isolation

Noise Figure

Unit

dBm

100MHz

15.2

37.1

19.0

4.7

500MHz

15.0

36.3

19.1

4.7

850MHz

14.8

36.5

19.1

21.0

4.6

1950MHz

14.2

33.5

19.0

20.5

4.8

2400MHz

12.4

32.7

18.3

19.7

19.6

4.9

3500MHz

12.1

29.7

16.4

20.2

5.0

Test Conditions: V

=8V, I

=80mA Typ., OIP

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=39, T

=25°C, Z

=50

NF vs Frequency

P1dB vs Frequency

7.00

6.50

6.00

5.50

5.00

4.50

4.00

3.50

3.00

2.50

2.00

1.50

1.00

0.5

1.5

2.5

Frequency (GHz)

dBm

+25c

-40c

+85c

-40c

+85c

0.5

1.5

2.5

3.5

IP3 vs Frequency

Frequency (GHz)

dBm

0.5

1.5

2.5

3.5

Frequency (GHz)

+25c

-40c

+85c

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS110708

SBA4086Z

| vs. Frequency

-5

-10

s11(dB)

+25c

-40c

+85c

| vs. Frequency

s21(dB)

-15

-20

-25

-30

-35

-40

Frequency (GHz)

+25c

-40c

+85c

Frequency (GHz)

| vs. Frequency

-12

+25c

| vs. Frequency

+25c

-40c

+85c

-14

-16

s12(dB)

-5

-40c

+85c

-18

-20

-22

-24

Frequency (GHz)

s22(dB)

-10

-15

-20

-25

Frequency (GHz)

-25

-30

-35

-40

-45

-50

-55

-60

-65

-70

-75

SBA4086Z IS-95 @ 850MHz

Adj. Channel Pwr. Vs. Channel Output Pwr.

SBA4086Z IS-95 @ 1950MHz

Adj. Channel Pwr. Vs. Channel Output Pwr.

-20

-25

-30

-35

-40

-45

-50

-55

-60

-65

-70

+25c

-40c

+85c

dBc

+25c

-40c

+85c

dBm

dBc

dBm

DS110708

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SBA4086Z

Basic Application Circuit

BIAS

1 uF

1000

RF in

SBA5086Z

RF out

Evaluation Board Layout

BIAS

1 uF

1000 pF

BA4

Mounting Instructions:

1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown.

2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1

ounce copper on both sides.

Application Circuit Element Values

Reference Designator

Supply Voltage (V

)

BIAS

500MHz

220pF

100pF

68nH

7.5V

33

850MHz

100pF

68pF

33nH

39

1950MHz

68pF

22pF

22nH

10V

68

2400MHz

56pF

22pF

18nH

12V

91

3500MHz

39pF

15pF

15nH

Recommended Bias Resistor Values for I

=80mA, R

BIAS

=(V

-V

) /I

Note: R

BIAS

provides DC bias stability over temperature.

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS110708

SBA4086Z

2, 4

Function

RF IN

GND

RF OUT/BIAS

Description

RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of opera-

tion.

Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as

possible.

RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for

proper operation.

PCB Pad Layout

Dimensions in inches [millimeters]

DS110708

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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