Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, IPAK-3
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Fairchild |
Parts packaging code | TO-251 |
package instruction | IN-LINE, R-PSIP-T3 |
Contacts | 3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Maximum collector current (IC) | 5 A |
Collector-emitter maximum voltage | 50 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 70 |
JEDEC-95 code | TO-251 |
JESD-30 code | R-PSIP-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 20 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 120 MHz |
Maximum off time (toff) | 1100 ns |
Maximum opening time (tons) | 100 ns |
KSC3074O | KSC3074OTU | KSC3074YTU | KSC3074Y | |
---|---|---|---|---|
Description | Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, IPAK-3 | transistor npn 50v 5A I-pak | transistor npn 50v 5A I-pak | Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, IPAK-3 |
Is it Rohs certified? | incompatible | conform to | conform to | incompatible |
Maker | Fairchild | Fairchild | Fairchild | Fairchild |
Parts packaging code | TO-251 | TO-251 | TO-251 | TO-251 |
package instruction | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IPAK-3 | IN-LINE, R-PSIP-T3 |
Contacts | 3 | 3 | 3 | 3 |
Reach Compliance Code | compliant | _compli | not_compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 5 A | 5 A | 5 A | 5 A |
Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 70 | 70 | 120 | 120 |
JEDEC-95 code | TO-251 | TO-251 | TO-251 | TO-251 |
JESD-30 code | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 |
JESD-609 code | e0 | e3 | e3 | e0 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
Polarity/channel type | NPN | NPN | NPN | NPN |
Maximum power dissipation(Abs) | 20 W | 20 W | 20 W | 20 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 120 MHz | 120 MHz | 120 MHz | 120 MHz |