PT9732 datasheet, PDF - EEWORLD Datasheet

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PT9732: DescriptionRF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4; CategoryDiscrete semiconductor The transistor; File Size14KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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PT9732 Overview

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4

PT9732 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, O-CRFM-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1.25 A
Collector-based maximum capacity	18 pF
Collector-emitter maximum voltage	35 V
Configuration	Single
Minimum DC current gain (hFE)	20
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	O-CRFM-F4
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	20 W
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	175 MHz

PT9732 Preview

PT9732

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI PT9732

is a common

Emitter transistor, designed for

broadband amplifier operations in

military, commercial and amateur

communication equipment.

PACKAGE STYLE .380 4L FLG

FEATURES:

•

P

G

= 12 dB min.

•

P

OUT

=

10 W

•

28 V, 175 MHz

•

Omnigold™

Metalization System

F

B

.112 x 45°

A

E

B

C

D

E

C

E

Ø.125 NOM.

FULL R

J

.125

MAXIMUM RATINGS

I

C

V

CES

V

CEO

V

EBO

P

DISS

T

J

T

STG

θ

JC

1.25 A

65 V

35 V

4.0 V

20 W @ T

C

= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

8.0 °C/W

DIM

A

B

C

D

E

F

G

H

I

J

.240 / 6.10

.004 / 0.10

.085 / 2.16

.160 / 4.06

MINIMUM

inches / mm

I

GH

MAXIMUM

inches / mm

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.230 / 5.84

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

CHARACTERISTICS

SYMBOL

BV

CEO

BV

CES

BV

EBO

I

CES

h

FE

C

OB

G

P

η

P

SAT

I

C

= 25 mA

I

C

= 50 mA

I

E

= 1.0 mA

V

CE

= 25 V

V

CE

= 10 V

V

CB

= 28 V

V

CE

= 28 V

T

C

= 25 °C

NONETEST

CONDITIONS

MINIMUM TYPICAL MAXIMUM

35

60

4.0

1.0

UNITS

V

mA

---

pF

dB

%

W

I

C

= 500 mA

f = 1.0 MHz

P

IN

= 1.0 W

f = 150 MHz

20

150

18

12

60

10

---

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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