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AT28C010-W

Description
EEPROM, 128KX8, 200ns, Parallel, CMOS
Categorystorage    storage   
File Size435KB,17 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

AT28C010-W Overview

EEPROM, 128KX8, 200ns, Parallel, CMOS

AT28C010-W Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrochip
package instructionDIE-32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time200 ns
Other featuresAUTOMATIC WRITE; DATA RETENTION: 10 YEARS
command user interfaceNO
Data pollingYES
Data retention time - minimum10
Durability10000 Write/Erase Cycles
JESD-30 codeX-XUUC-N32
memory density1048576 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIE
Encapsulate equivalent codeDIE OR CHIP
Package shapeUNSPECIFIED
Package formUNCASED CHIP
page size128 words
Parallel/SerialPARALLEL
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum standby current0.0003 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationUPPER
switch bitYES
Maximum write cycle time (tWC)10 ms
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