100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Parameter Name | Attribute value |
Number of terminals | 3 |
Minimum breakdown voltage | 60 V |
Processing package description | GREEN, PLASTIC, DFN1006-3, 3 PIN |
Lead-free | Yes |
EU RoHS regulations | Yes |
state | ACTIVE |
packaging shape | RECTANGULAR |
Package Size | CHIP CARRIER |
surface mount | Yes |
Terminal form | NO LEAD |
terminal coating | NICKEL PALLADIUM GOLD |
Terminal location | BOTTOM |
Packaging Materials | PLASTIC/EPOXY |
structure | SINGLE WITH BUILT-IN DIODE |
Shell connection | DRAIN |
Number of components | 1 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Channel type | N-CHANNEL |
field effect transistor technology | METAL-OXIDE SEMICONDUCTOR |
operating mode | ENHANCEMENT |
Transistor type | GENERAL PURPOSE SMALL SIGNAL |
Maximum leakage current | 0.1000 A |
Maximum drain on-resistance | 2 ohm |