SMD Type
PNP Transistors
KTA1001
Transistors
1.70
0.1
■
Features
●
Low Collector Saturation Voltage
●
High Power Dissipation
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Ta = 25℃
Tc = 25℃
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
stg
Rating
-35
-20
-8
-3
-5
-0.5
0.5
1
150
-55 to 150
W
A
V
Unit
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE(1)
h
FE(2)
C
ob
f
T
Test Conditions
Ic= -1 mA， I
E
=0
Ic= -10 mA， I
B
=0
I
E
= -1 mA， I
C
=0
V
CB
= -35 V , I
E
=0
V
EB
= -8V , I
C
=0
I
C
=-3 A, I
B
=-75mA
I
C
=-3 A, I
B
=-75mA
V
CE
= -2V, I
C
= -3 A
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -3 A
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -2V, I
C
= -500mA
100
70
62
170
pF
MHz
Min
-35
-20
-8
-100
-100
-0.5
-1.2
-1.5
320
V
nA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
KTA1001-O
100-200
KO
KTA1001-Y
160-320
KY
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1
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