SMD Type
NPN Transistors
2SD1005-HF
Transistors
Features
World standard miniature package: SOT-89.
High collector to base voltage: V
CBO
100V.
0.42 0.1
1.70
0.1
Excellent dc current gain linearity: h
FE
=80TYP. (V
CE
=2V, I
C
=500mA).
0.46 0.1
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Total power dissipation
at 25
ambient temperature *
Junction temperature
Storage temperature
*1. PW
10ms,duty cycle
50%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
100
80
5
1
1.5
2
150
-55 to +150
Unit
V
V
V
A
A
W
*2. When mounted on ceramic substrate of 16cm
2
X 0.7mm
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base - emitter saturation voltage *
Base - emitter voltage *
DC current gain
*
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic=1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 100 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=500 mA, I
B
=50mA
I
C
=500 mA, I
B
=50mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
V
CB
= 10V, I
E
=0,f=1MHz
V
CE
= 5 V, I
E
=-10mA
0.6
90
45
200
200
12
160
pF
MHz
Min
100
80
5
0.1
0.1
0.5
1.5
0.7
400
V
uA
V
Typ
Max
Unit
Collector output capacitance
Transition frequency
*. PW
h
FE
Classification(1)
Type
Range
Marking
350us,duty cycle
2%
2SD1005-U-HF
200-400
BU
F
2SD1005-W-HF 2SD1005-V-HF
90-180
BW
F
135-270
BV
F
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