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SUN0550F

Description
Advanced N-Ch Power MOSFET
File Size373KB,8 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet View All

SUN0550F Overview

Advanced N-Ch Power MOSFET

SUN0550F
Advanced N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: R
DS(on)
=1.23Ω (Typ.)
Low gate charge: Q
g
=10.5nC (Typ.)
Low reverse transfer capacitance: C
rss
=2pF (Typ.)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
SUN0550F
Marking
SUN0550
Package
TO-220F-3L
GDS
TO-220F-3L
Marking Information
Column 1: Manufacturer
Column 2: Production Information
e.g.)
△YMDD
-.
△:
Factory Management Code
-. YMDD: Date Code (Year, Month, Date)
Column 3: Device Code
AUK
AUK
△YMDD
Δ
YMDD
SUN0550
SDB20D45
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
*
(T
C
=25C unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
T
c
=25C
T
c
=100C
I
DM
(Note 2)
Rating
500
30
4.5
2.85
18
281
4.5
2.9
29
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
Single pulsed avalanche energy
Repetitive avalanche current
Repetitive avalanche energy
Power dissipation
Junction temperature
Storage temperature range
E
AS
I
AR
E
AR
P
D
T
J
T
stg
(Note 1)
(Note 1)
* Limited only maximum junction temperature
Rev. date: 01-MAY-13
KSD-T0O124-000
www.auk.co.kr
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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