W632GG8KB-12 datasheet, PDF - EEWORLD Datasheet

W632GG8KB-12: Description32M X 8 BANKS X 8 BIT DDR3 SDRAM; Categorystorage storage; File Size4MB，159 Pages; ManufacturerWinbond Electronics Corporation; Websitehttp://www.winbond.com.tw; Environmental Compliance

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W632GG8KB-12 Overview

32M X 8 BANKS X 8 BIT DDR3 SDRAM

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Winbond Electronics Corporation
Parts packaging code	BGA
package instruction	TFBGA, BGA78,9X13,32
Contacts	78
Reach Compliance Code	compli
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.225 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	800 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B78
length	10.5 mm
memory density	2147483648 bi
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	78
word count	268435456 words
character code	256000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	256MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA78,9X13,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.019 A
Maximum slew rate	0.34 mA
Maximum supply voltage (Vsup)	1.575 V
Minimum supply voltage (Vsup)	1.425 V
Nominal supply voltage (Vsup)	1.5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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