KSM13N10L
100V LOGIC N-Channel MOSFET
Features
•
•
•
•
•
•
•
12.8A, 100V, R
DS(on)
= 0.18Ω @V
GS
= 10 V
Low gate charge ( typical 8.7 nC)
Low Crss ( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
TO-220
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Krsemi proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as high
efficiency switching DC/DC converters, and DC motor
control.
D
!
G
!
"
! "
"
"
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
KSM13N10L
100
12.8
9.05
51.2
±
20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
95
12.8
6.5
6.0
65
0.43
-55 to +175
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
2.31
--
62.5
Units
°C/W
°C/W
°C/W
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KSM13N10L
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, T
C
= 150°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
--
--
--
--
--
--
0.09
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 6.4 A
V
GS
= 5 V, I
D
= 6.4 A
V
DS
= 30 V, I
D
= 6.4 A
(Note 4)
1.0
--
--
--
0.142
0.158
9.5
2.0
0.18
0.2
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
400
95
20
520
125
25
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 80 V, I
D
= 12.8 A,
V
GS
= 5 V
(Note 4, 5)
V
DD
= 50 V, I
D
= 12.8 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
7.5
220
22
72
8.7
2.0
5.3
25
450
55
150
12
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 12.8 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 12.8 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
75
0.17
12.8
51.2
1.5
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.87mH, I
AS
= 12.8A, V
DD
= 25V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
12.8A, di/dt
≤
300A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
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KSM13N10L
Typical Characteristics
V
GS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Top :
10
1
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
175℃
10
0
25℃
-55℃
※
Notes :
1. V
DS
= 30V
2. 250μ Pulse Test
s
10
0
※
Notes :
s
1. 250μ Pulse Test
2. T
C
= 25℃
-1
0
1
10
-1
10
10
10
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
0.4
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
0.6
V
GS
= 5V
10
1
10
0
0.2
175℃
-1
25℃
※
Note : T
J
= 25℃
※
Notes :
1. V
GS
= 0V
2. 250μ Pulse Test
s
0.0
0
10
20
30
40
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
800
10
V
DS
= 50V
V
GS
, Gate-Source Voltage [V]
8
V
DS
= 80V
Capacitance [pF]
600
C
iss
6
400
C
oss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
4
200
C
rss
2
※
Note : I
D
= 12.8A
0
10
-1
10
0
10
1
0
4
8
12
16
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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KSM13N10L
Typical Characteristics
1.2
3.0
2.5
(Continued)
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
0.9
※
Notes :
1. V
GS
= 0 V
A
2. I
D
= 250
μ
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 6.4 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
15
2
10
Operation in This Area
is Limited by R
DS(on)
12
100
µ
s
I
D
, Drain Current [A]
1 ms
10
1
I
D
, Drain Current [A]
2
10 ms
DC
9
6
10
0
※
Notes :
1. T
C
= 25 C
2. T
J
= 175 C
3. Single Pulse
o
o
3
10
-1
10
0
10
1
10
0
25
50
75
100
125
150
175
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
( t) , T h e r m a l R e s p o n s e
10
0
D = 0 .5
0 .2
0 .1
0 .0 5
※
N o te s :
1 . Z
θ
J C
( t) = 2 .3 1
℃
/W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t)
10
-1
θ
JC
0 .0 2
0 .0 1
s i n g l e p u ls e
P
DM
t
1
t
2
Z
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
2014-5-30
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KSM13N10L
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
5V
Q
gs
Q
gd
V
GS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
V
GS
R
G
R
L
V
DD
V
DS
90%
5V
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
10V
t
p
BV
DSS
1
2
--------------------
E
AS
= ---- L I
AS
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
I
D
(t)
V
DD
t
p
DUT
V
DS
(t)
Time
2014-5-30
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