IRLR8256PBF
IRLU8256PBF
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
Lead-Free
l
RoHS compliant
D-Pak
IRLR8256PbF
I-Pak
IRLU8256PbF
V
DSS
25V
R
DS(on)
max
5.7m
:
Max.
25
± 20
81
Qg
10nC
Units
V
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
g
Maximum Power Dissipation
g
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
f
57
f
325
63
31
A
W
W/°C
°C
0.42
-55 to + 175
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
gÃ
Junction-to-Ambient
h
Typ.
–––
–––
–––
Max.
2.4
50
110
Units
°C/W
2014-8-25
1
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IRLR8256PBF
IRLU8256PBF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min. Typ. Max. Units
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
81
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
4.2
6.7
1.8
-7.2
–––
–––
–––
–––
–––
10
2.3
1.6
3.6
2.6
5.1
9.0
2.5
9.7
46
12
8.5
1470
453
185
–––
–––
5.7
8.5
Conditions
V V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ
V
GS
= 10V, I
D
= 25A
V
GS
= 4.5V, I
D
= 20A
2.35
V
V
DS
= V
GS
, I
D
= 25µA
––– mV/°C
1.0
150
100
-100
–––
15
–––
–––
–––
–––
–––
–––
3.9
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
pF
nC
Ω
µA
nA
S
e
e
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 20A
V
DS
= 13V
V
GS
= 4.5V
I
D
= 20A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
nC
ns
I
D
= 20A
e
R
G
= 1.8Ω
See Fig. 14
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Max.
86
20
6.3
Units
mJ
A
mJ
Avalanche Characteristics
Ã
d
–––
–––
–––
–––
–––
–––
–––
–––
19
17
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
81
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 13V
di/dt = 300A/µs
f
A
Ã
325
1.0
29
26
V
ns
nC
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-25
2
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IRLR8256PBF
IRLU8256PBF
1000
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
1000
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
Tj = 175°C
0.1
1
10
1
2.5V
0.1
0.1
≤
60µs PULSE WIDTH
= 25°C
Tj
1
10
100
≤
60µs PULSE WIDTH
100
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
100
T J = 175°C
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 25A
VGS = 10V
1.5
1.0
1
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
2014-8-25
3
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IRLR8256PBF
IRLU8256PBF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
5.0
ID= 20A
VGS, Gate-to-Source Voltage (V)
4.0
VDS= 20V
VDS= 13V
C, Capacitance (pF)
Ciss
1000
Coss
3.0
2.0
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
1.0
0.0
0
1
2
3
4
5
6
7
8
9 10 11 12 13
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
ISD, Reverse Drain Current (A)
100
TJ = 175°C
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
2014-8-25
4
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IRLR8256PBF
IRLU8256PBF
90
VGS(th), Gate threshold Voltage (V)
2.5
Limited By Package
80
70
ID, Drain Current (A)
2.0
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
ID = 25µA
1.0
0.5
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
0.1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
4
Ri (°C/W)
0.04252
τ
τi
(sec)
0.000007
0.000109
0.001003
0.57953
1.17480
τ
1
τ
2
τ
3
τ
4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
0.60472 0.005976
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-25
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