EEWORLDEEWORLDEEWORLD

Part Number

Search

EDI8M32512C85GM

Description
SRAM Module, 2MX8, 85ns, CMOS,
Categorystorage    storage   
File Size153KB,6 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

EDI8M32512C85GM Overview

SRAM Module, 2MX8, 85ns, CMOS,

EDI8M32512C85GM Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
Reach Compliance Codeunknown
Maximum access time85 ns
Other featuresCONFIGURABLE AS 512K X 32
Spare memory width16
JESD-30 codeS-XHIP-P66
memory density16777216 bit
Memory IC TypeSRAM MODULE
memory width8
Number of functions1
Number of ports1
Number of terminals66
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize2MX8
Output characteristics3-STATE
ExportableYES
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formPIN/PEG
Terminal locationHEX

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号